Publikationen (219) Publikationen von JUAN BAUTISTA ROLDÁN ARANDA

2024

  1. Compact modeling of hysteresis in organic thin-film transistors

    Organic Electronics, Vol. 129

  2. Different PCA approaches for vector functional time series with applications to resistive switching processes

    Mathematics and Computers in Simulation, Vol. 223, pp. 288-298

  3. Hardware implementation of memristor-based artificial neural networks

    Nature Communications, Vol. 15, Núm. 1

  4. High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors

    Advanced Functional Materials, Vol. 34, Núm. 15

  5. Hysteresis in memristors produces conduction inductance and conduction capacitance effects

    Physical Chemistry Chemical Physics, Vol. 26, Núm. 18, pp. 13804-13813

  6. Non-uniform WENO-based quasi-interpolating splines from the Bernstein–Bézier representation and applications

    Mathematics and Computers in Simulation, Vol. 223, pp. 158-170

  7. Stochastic resonance in 2D materials based memristors

    npj 2D Materials and Applications, Vol. 8, Núm. 1

  8. Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

    ACS Applied Electronic Materials, Vol. 6, Núm. 2, pp. 1424-1433

  9. Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

    Materials Science in Semiconductor Processing, Vol. 179

2023

  1. 3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach

    Materials Horizons, Vol. 11, Núm. 4, pp. 949-957

  2. A Comparison of Resistive Switching Parameters for Memristive Devices with HfO2Mono Layers and Al2O3/HfO2Bilayers at the Wafer Scale

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  3. A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices

    Physica Status Solidi (A) Applications and Materials Science, Vol. 220, Núm. 11

  4. An approach to non-homogenous phase-type distributions through multiple cut-points

    Quality Engineering, Vol. 35, Núm. 4, pp. 619-638

  5. Characterization and Modeling of Variability in Commercial Self-Directed Channel Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  6. Conductance quantization in h-BN memristors

    Applied Physics Letters, Vol. 122, Núm. 20

  7. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  8. Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient

    ACS Applied Materials and Interfaces, Vol. 15, Núm. 15, pp. 19102-19110

  9. Hybrid 2D–CMOS microchips for memristive applications

    Nature, Vol. 618, Núm. 7963, pp. 57-62

  10. Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 4, pp. 1533-1539

  11. Parameter Extraction Methods for Assessing Device-to-Device and Cycle-to-Cycle Variability of Memristive Devices at Wafer Scale

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 1, pp. 360-365