Publicaciones en las que colabora con FRANCISCO JESÚS GÁMIZ PÉREZ (16)

2020

  1. CVD-grown back-gated MoS2transistors

    2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020

  2. Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic

    IEEE Access, Vol. 8, pp. 132376-132381

  3. Investigating the transient response of Schottky barrier back-gated MoS2 transistors

    2D Materials, Vol. 7, Núm. 2

2019

  1. 3-D TCAD Study of the implications of channel width and interface states on FD-SOI Z2-FETs

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 6, pp. 2513-2519

  2. Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm

    Nature Electronics, Vol. 2, Núm. 9, pp. 412-419

  3. Capacitorless memory devices using virtual junctions

    19th International Workshop on Junction Technology, IWJT 2019

  4. Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells

    Solid-State Electronics, Vol. 159, pp. 12-18

  5. On the Low-Frequency Noise Characterization of Z2-FET Devices

    IEEE Access, Vol. 7, pp. 42551-42556

  6. Reliability study of thin-oxide zero-ionization, zero-swing FET 1T-DRAM memory cell

    IEEE Electron Device Letters, Vol. 40, Núm. 7, pp. 1084-1087

  7. Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power

    IEEE Access, Vol. 7, pp. 40279-40284

  8. TCAD Analysis of III-V capacitor-less A2RAM cells

    2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

  9. Temperature and Gate Leakage Influence on the Z2-FET Memory Operation

    European Solid-State Device Research Conference

2018

  1. Evaluation of thin-oxide Z2-FET DRAM cell

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  2. Experimental Demonstration of Operational Z2-FET Memory Matrix

    IEEE Electron Device Letters, Vol. 39, Núm. 5, pp. 660-663

  3. InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

    IEEE Journal of the Electron Devices Society, Vol. 6, pp. 884-892

  4. Towards InGaAs MSDRAM capacitor-less cells

    ECS Transactions