JUAN ANTONIO
JIMÉNEZ TEJADA
CATEDRÁTICO DE UNIVERSIDAD
Interuniversity Microelectronics Centre
Lovaina, BélgicaPublicaciones en colaboración con investigadores/as de Interuniversity Microelectronics Centre (10)
2013
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Lessons learned from low-frequency noise studies on fully depleted UTBOX silicon-on-insulator nMOSFETs
ECS Transactions
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Low-frequency noise studies on fully depleted UTBOX silicon-on-insulator nMOSFETs: Challenges and opportunities
ECS Journal of Solid State Science and Technology, Vol. 2, Núm. 11
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Reliability insights into low frequency noise in high-mobility transistors
Solid State Technology, Vol. 56, Núm. 2, pp. 25-28
2012
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Dependence of generation-recombination noise with gate voltage in FD SOI MOSFETs
IEEE Transactions on Electron Devices, Vol. 59, Núm. 10, pp. 2780-2786
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Insights in low frequency noise of advanced and high-mobility channel transistors
Technical Digest - International Electron Devices Meeting, IEDM
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On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs
European Solid-State Device Research Conference
2011
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Ge content and recess depth dependence of the band-to-band tunneling current in Si1-xGex/Si hetero-junctions
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible p-n junctions
Journal of the Electrochemical Society, Vol. 158, Núm. 5
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Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions
IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2362-2370
2010
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Modeling impact of electric field and strain on the leakage of embedded SiGe source/drain junctions
2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010