Departamento
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Artículos (13) Publicaciones en las que ha participado algún/a investigador/a
1997
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A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers
Journal of Applied Physics, Vol. 81, Núm. 10, pp. 6857-6865
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A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in mosfet's
IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1447-1453
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A detailed simulation study of the performance of β-silicon carbide MOSFETs and a comparison with their silicon counterparts
Semiconductor Science and Technology, Vol. 12, Núm. 6, pp. 655-661
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Effects of the inversion layer centroid on MOSFET behavior
IEEE Transactions on Electron Devices, Vol. 44, Núm. 11, pp. 1915-1922
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Electron transport properties of quantized silicon carbide inversion layers
Journal of Electronic Materials, Vol. 26, Núm. 3, pp. 203-207
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Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628
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Influence of the doping profile and deep level trap characteristics on generation-recombination noise
Journal of Applied Physics, Vol. 82, Núm. 7, pp. 3351-3357
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Modeling effects of electron-velocity overshoot in a MOSFET
IEEE Transactions on Electron Devices, Vol. 44, Núm. 5, pp. 841-846
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Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures
Physical Review B - Condensed Matter and Materials Physics, Vol. 56, Núm. 15, pp. 9565-9574
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Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors
Applied Physics Letters, Vol. 70, Núm. 16, pp. 2153-2155
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Study of the effects of a stepped doping profile in short-channel mosfet's
IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1425-1431
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The dependence of the electron mobility on the longitudinal electric field in MOSFETs
Semiconductor Science and Technology, Vol. 12, Núm. 3, pp. 321-330
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Understanding the improved performance of strained Si/Si1-xGex channel MOSFETs
Semiconductor Science and Technology, Vol. 12, Núm. 12, pp. 1603-1608