Artículos (13) Publicaciones en las que ha participado algún/a investigador/a

1997

  1. A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers

    Journal of Applied Physics, Vol. 81, Núm. 10, pp. 6857-6865

  2. A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in mosfet's

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1447-1453

  3. A detailed simulation study of the performance of β-silicon carbide MOSFETs and a comparison with their silicon counterparts

    Semiconductor Science and Technology, Vol. 12, Núm. 6, pp. 655-661

  4. Effects of the inversion layer centroid on MOSFET behavior

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 11, pp. 1915-1922

  5. Electron transport properties of quantized silicon carbide inversion layers

    Journal of Electronic Materials, Vol. 26, Núm. 3, pp. 203-207

  6. Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628

  7. Influence of the doping profile and deep level trap characteristics on generation-recombination noise

    Journal of Applied Physics, Vol. 82, Núm. 7, pp. 3351-3357

  8. Modeling effects of electron-velocity overshoot in a MOSFET

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 5, pp. 841-846

  9. Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures

    Physical Review B - Condensed Matter and Materials Physics, Vol. 56, Núm. 15, pp. 9565-9574

  10. Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

    Applied Physics Letters, Vol. 70, Núm. 16, pp. 2153-2155

  11. Study of the effects of a stepped doping profile in short-channel mosfet's

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1425-1431

  12. The dependence of the electron mobility on the longitudinal electric field in MOSFETs

    Semiconductor Science and Technology, Vol. 12, Núm. 3, pp. 321-330

  13. Understanding the improved performance of strained Si/Si1-xGex channel MOSFETs

    Semiconductor Science and Technology, Vol. 12, Núm. 12, pp. 1603-1608