Artículos (12) Publicaciones en las que ha participado algún/a investigador/a

2001

  1. A simple subthreshold swing model for short channel MOSFETs

    Solid-State Electronics, Vol. 45, Núm. 3, pp. 391-397

  2. Contribution of injection in current noise due to generation and recombination of carriers in p-n junctions

    Journal of Applied Physics, Vol. 90, Núm. 8, pp. 3998-4006

  3. Control PID sobre dispositivos programables

    Mundo electrónico, Núm. 323, pp. 60-61

  4. Design of RNS-based distributed arithmetic DWT filterbanks

    ICASSP, IEEE International Conference on Acoustics, Speech and Signal Processing - Proceedings, Vol. 2, pp. 1193-1196

  5. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

  6. Implementation of a communications using FPGAs and RNS arithmetic

    Journal of VLSI Signal Processing Systems for Signal, Image, and Video Technology, Vol. 28, Núm. 1-2, pp. 115-128

  7. Improving strained-Si on Si 1-xGe x deep submicron MOSFETs performance by means of a stepped doping profile

    IEEE Transactions on Electron Devices, Vol. 48, Núm. 9, pp. 1878-1884

  8. Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion

    Journal of Applied Physics, Vol. 89, Núm. 10, pp. 5478-5487

  9. Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

    Journal of Applied Physics, Vol. 90, Núm. 7, pp. 3396-3404

  10. Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770

  11. Solid-State Electronics: Foreword

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 539

  12. Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

    IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449