Publicaciones en las que colabora con SALVADOR RODRÍGUEZ BOLÍVAR (13)

2012

  1. DC and low-frequency noise optimization of four-gate transistors

    2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

  2. Effects of gate oxide and junction nonuniformity on the DC and low-frequency noise performance of four-gate transistors

    IEEE Transactions on Electron Devices, Vol. 59, Núm. 2, pp. 459-467

2011

  1. Learning in a virtual laboratory: Educational applications of three-dimensional animations

    International Journal of Innovation and Learning, Vol. 9, Núm. 3, pp. 325-337

2010

  1. Localization and quantification of noise sources in four-gate field-effect-transistors

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

2009

  1. Effect of traps in the performance of four gate transistors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. A low-frequency noise model for four-gate field-effect transistors

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 3, pp. 896-903

2005

  1. Characterization of oxygen related defects in silicon p-n junctions

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Effects of oxygen-related traps in silicon on the generation-recombination noise

    AIP Conference Proceedings

  3. Implications of nonparabolicity, warping, and inelastic phonon scattering on hole transport in pure Si and Ge within the effective mass framework

    Journal of Applied Physics, Vol. 97, Núm. 1

2000

  1. Influence of technological parameters on the behavior of the hole effective mass in SiGe structures

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 1978-1982

1999

  1. Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 86, Núm. 11, pp. 6269-6275

  2. Experimental determination of the effective mobility in NMOSFETs: a comparative study

    Solid-State Electronics, Vol. 43, Núm. 4, pp. 701-707

1997

  1. Effects of the inversion layer centroid on MOSFET behavior

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 11, pp. 1915-1922