GRUPO DE INVESTIGACIÓN EN NANOELECTRÓNICA
NRG
Universitat Autònoma de Barcelona
Barcelona, EspañaPublications in collaboration with researchers from Universitat Autònoma de Barcelona (45)
2024
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A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
Materials Science in Semiconductor Processing, Vol. 169
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Hardware implementation of memristor-based artificial neural networks
Nature Communications, Vol. 15, Núm. 1
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Hysteresis in memristors produces conduction inductance and conduction capacitance effects
Physical Chemistry Chemical Physics, Vol. 26, Núm. 18, pp. 13804-13813
2023
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Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
Journal of Physics D: Applied Physics, Vol. 56, Núm. 36
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Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics
Small, Vol. 19, Núm. 49
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Reconfigurable frequency multipliers based on graphene field-effect transistors
Discover Nano, Vol. 18, Núm. 1
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Variability in Resistive Memories
Advanced Intelligent Systems, Vol. 5, Núm. 6
2022
2021
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Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors
IEEE Transactions on Electron Devices, Vol. 68, Núm. 11, pp. 5916-5919
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Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
Journal of Applied Physics, Vol. 130, Núm. 5
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Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
Nanoscale Advances, Vol. 3, Núm. 8, pp. 2377-2382
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On the thermal models for resistive random access memory circuit simulation
Nanomaterials, Vol. 11, Núm. 5
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Standards for the Characterization of Endurance in Resistive Switching Devices
ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231
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Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications
Nano Express, Vol. 2, Núm. 3
2020
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A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
IEEE Access, Vol. 8, pp. 209055-209063
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Modeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theory
Journal of Physics D: Applied Physics, Vol. 53, Núm. 29
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Neural network based analysis of random telegraph noise in resistive random access memories
Semiconductor Science and Technology, Vol. 35, Núm. 2
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Numerical study of surface chemical reactions in 2D-FET based pH sensors
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2019
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Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits
Solid-State Electronics, Vol. 157, pp. 25-33