JUAN ENRIQUE
CARCELLER BELTRÁN
Investigador en el periodo 1993-2023
Publicaciones en las que colabora con JUAN ENRIQUE CARCELLER BELTRÁN (15)
2011
-
Learning in a virtual laboratory: Educational applications of three-dimensional animations
International Journal of Innovation and Learning, Vol. 9, Núm. 3, pp. 325-337
2005
-
Characterization of oxygen related defects in silicon p-n junctions
2005 Spanish Conference on Electron Devices, Proceedings
-
Effects of oxygen-related traps in silicon on the generation-recombination noise
AIP Conference Proceedings
-
Monte Carlo simulation of velocity modulation transistors
2005 Spanish Conference on Electron Devices, Proceedings
2004
-
Double gate silicon on insulator transistors. A Monte Carlo study
Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945
-
Effects of oxygen related defects on the electrical and thermal behavior of a n+ - p junction
Journal of Applied Physics, Vol. 95, Núm. 2, pp. 561-570
2003
-
Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs
Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937
-
Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
Journal of Applied Physics, Vol. 94, Núm. 9, pp. 5732-5741
2000
-
Optimum design in a JFET for minimum generation-recombination noise
Microelectronics Reliability, Vol. 40, Núm. 11, pp. 1965-1968
1997
-
Gate voltage and temperature dependencies of up and down times of RTS in MOS structures: A theoretical study
Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations
-
Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures
Physical Review B - Condensed Matter and Materials Physics, Vol. 56, Núm. 15, pp. 9565-9574
-
Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors
Applied Physics Letters, Vol. 70, Núm. 16, pp. 2153-2155
1996
-
Anomalous behaviour of the electric field in highly-compensated non-uniform semiconductors at low temperatures
Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 99-103
1995
-
Influence of the position of deep levels on generation-recombination noise
Applied Physics Letters, Vol. 67, pp. 3581
-
Monte Carlo study of the statistics of electron capture by shallow donors in silicon at low temperatures
Physical Review B, Vol. 51, Núm. 20, pp. 14147-14151