JESÚS
BANQUERI OZÁEZ
CATEDRÁTICO DE UNIVERSIDAD
JUAN ENRIQUE
CARCELLER BELTRÁN
Investigador en el període 1993-2023
Publicacions en què col·labora amb JUAN ENRIQUE CARCELLER BELTRÁN (12)
1999
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Experimental determination of the effective mobility in NMOSFETs: a comparative study
Solid-State Electronics, Vol. 43, Núm. 4, pp. 701-707
1996
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A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region
Solid-State Electronics, Vol. 39, Núm. 6, pp. 875-883
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Semi-empirical model of electron mobility in MOSFETS in strong inversion regime
IEE Proceedings: Circuits, Devices and Systems, Vol. 143, Núm. 4, pp. 202-206
1995
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Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs
Solid State Electronics, Vol. 38, Núm. 3, pp. 611-614
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Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K
Microelectronic Engineering, Vol. 28, Núm. 1-4, pp. 317-320
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Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's
IEEE Transactions on Electron Devices, Vol. 42, Núm. 5, pp. 999-1004
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Oxide charge space correlation in inversion layers. II. Three-dimensional oxide charge distribution
Semiconductor Science and Technology, Vol. 10, Núm. 5, pp. 592-600
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Universality of electron mobility curves in MOSFETs: a Monte Carlo study
IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265
1993
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Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions
Journal of Applied Physics, Vol. 74, Núm. 4, pp. 2605-2612
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An analytical expression for phonon-limited electron mobility in silicon-inversion layers
Journal of Applied Physics, Vol. 74, Núm. 5, pp. 3289-3292
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Influence of the interface-state density on the electron mobility in silicon inversion layers
Journal of Electronic Materials, Vol. 22, Núm. 9, pp. 1159-1163