Publicaciones en las que colabora con JUAN ENRIQUE CARCELLER BELTRÁN (8)

2004

  1. Image and exchange-correlation effects in double gate silicon-on-insulator transistors

    Microelectronic Engineering

2003

  1. Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

    Journal of Applied Physics, Vol. 94, Núm. 9, pp. 5732-5741

  2. Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers

    Applied Physics Letters, Vol. 83, Núm. 15, pp. 3120-3122

  3. Strained-Si on Si1-xGex MOSFET mobility model

    IEEE Transactions on Electron Devices, Vol. 50, Núm. 5, pp. 1408-1411

2001

  1. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

1999

  1. Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 86, Núm. 11, pp. 6269-6275

  2. Experimental determination of the effective mobility in NMOSFETs: a comparative study

    Solid-State Electronics, Vol. 43, Núm. 4, pp. 701-707

  3. Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 86, Núm. 12, pp. 6854-6863