Publicaciones en las que colabora con NOEL RODRÍGUEZ SANTIAGO (18)

2018

  1. Gate-induced vs. implanted body doping impact on Z2-FET DC operation

    2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017

2013

  1. Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

    Journal of Applied Physics, Vol. 113, Núm. 14

2012

  1. Combined effect of mechanical stressors and channel orientation on mobility in FDSOI n and p MOSFETs

    Proceedings - IEEE International SOI Conference

  2. Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET

    European Solid-State Device Research Conference

2011

  1. Ultrathin n-Channel and p-Channel SOI MOSFETs

    Engineering Materials (Springer Science and Business Media B.V.), pp. 169-185

2010

  1. Hole transport in DGSOI devices: Orientation and silicon thickness effects

    Solid-State Electronics, Vol. 54, Núm. 2, pp. 191-195

2009

  1. Hole mobility in ultrathin double-gate soi devices: The effect of acoustic phonon confinement

    IEEE Electron Device Letters, Vol. 30, Núm. 12, pp. 1338-1340

  2. Monte Carlo simulation of nanoelectronic devices

    Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191

  3. Simulation of hole mobility in DGSOI transistors

    ECS Transactions

  4. The effect of surface roughness scattering on hole mobility in double gate silicon-on-insulator devices

    Journal of Applied Physics, Vol. 106, Núm. 2

  5. Ultrathin body effects in multiple-gate SOI transistors

    ECS Transactions

2008

  1. Enhanced electron transport by carrier overshoot in ultrascaled Double Gate MOSFETs

    ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON

  2. Enhanced electron transport by carrier overshoot in ultrascaled double gate MOSFETs

    ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

  3. Fully self-consistent k p solver and monte carlo simulator for hole inversion layers

    ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

2007

  1. Anisotropy of electron mobility in arbitrarily oriented FinFETs

    ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

  2. Geometric magnetoresistance and mobility behavior in single-gate and double-gate SOI devices

    Proceedings - IEEE International SOI Conference

  3. Phonon scattering in Si-based nanodevices

    Solid-State Electronics, Vol. 51, Núm. 4 SPEC. ISS., pp. 593-597

2006

  1. Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers

    Applied Physics Letters, Vol. 88, Núm. 12