Publicaciones en las que colabora con ENRIQUE GONZÁLEZ MARÍN (15)

2017

  1. Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 49

2016

  1. On the influence of the back-gate bias on InGaAs Trigate MOSFETs

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

2015

  1. Analytic Potential and Charge Model of Semiconductor Quantum Wells

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 12, pp. 4186-4191

  2. Analytic drain current model for III-V cylindrical nanowire transistors

    Journal of Applied Physics, Vol. 118, Núm. 4

  3. Impact of the back-gate biasing on trigate MOSFET electron mobility

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 1, pp. 224-227

  4. Mobility and capacitance comparison in scaled InGaAs versus Si trigate MOSFETs

    IEEE Electron Device Letters, Vol. 36, Núm. 2, pp. 114-116

  5. Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors

    Solid-State Electronics, Vol. 114, pp. 30-34

  6. The unexpected beneficial effect of the L -valley population on the electron mobility of GaAs nanowires

    Applied Physics Letters, Vol. 106, Núm. 2

2014

  1. Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects

    Solid-State Electronics, Vol. 92, pp. 28-34

  2. Influence of alloy disorder scattering on the hole mobility of SiGe nanowires

    Journal of Applied Physics, Vol. 116, Núm. 24

  3. Size-dependent electron mobility in InAs nanowires

    European Solid-State Device Research Conference

  4. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    Journal of Applied Physics, Vol. 116, Núm. 17

2013

  1. Analytical gate capacitance modeling of III-V nanowire transistors

    IEEE Transactions on Electron Devices, Vol. 60, Núm. 5, pp. 1590-1599

  2. Influence of the back-gate bias on the electron mobility of trigate MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2012

  1. Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors

    Journal of Applied Physics, Vol. 112, Núm. 8