Publicaciones en las que colabora con ANDRÉS GODOY MEDINA (15)

2012

  1. DC and low-frequency noise optimization of four-gate transistors

    2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

  2. Effects of gate oxide and junction nonuniformity on the DC and low-frequency noise performance of four-gate transistors

    IEEE Transactions on Electron Devices, Vol. 59, Núm. 2, pp. 459-467

2011

  1. Learning in a virtual laboratory: Educational applications of three-dimensional animations

    International Journal of Innovation and Learning, Vol. 9, Núm. 3, pp. 325-337

2009

  1. Effect of traps in the performance of four gate transistors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Influence of dopant profiles and traps on the low frequency noise of four gate transistors

    AIP Conference Proceedings

2008

  1. A low-frequency noise model for four-gate field-effect transistors

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 3, pp. 896-903

2005

  1. Characterization of oxygen related defects in silicon p-n junctions

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Effects of oxygen-related traps in silicon on the generation-recombination noise

    AIP Conference Proceedings

2004

  1. Effects of oxygen related defects on the electrical and thermal behavior of a n+ - p junction

    Journal of Applied Physics, Vol. 95, Núm. 2, pp. 561-570

2002

  1. Generation-recombination noise in highly asymmetrical p-n junctions

    Journal of Applied Physics, Vol. 92, Núm. 1, pp. 320-329

2001

  1. A simple subthreshold swing model for short channel MOSFETs

    Solid-State Electronics, Vol. 45, Núm. 3, pp. 391-397

  2. Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

    IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449

1997

  1. Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628

  2. Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures

    Physical Review B - Condensed Matter and Materials Physics, Vol. 56, Núm. 15, pp. 9565-9574

1995

  1. Monte Carlo study of the statistics of electron capture by shallow donors in silicon at low temperatures

    Physical Review B, Vol. 51, Núm. 20, pp. 14147-14151