Publicaciones en las que colabora con ALBERTO JOSÉ PALMA LÓPEZ (25)

2018

  1. Asymmetric enhanced surface interdigitated electrode capacitor with two out-of-plane electrodes

    Sensors and Actuators, B: Chemical, Vol. 254, pp. 588-596

2016

  1. Hybrid Printed Device for Simultaneous Vapors Sensing

    IEEE Sensors Journal, Vol. 16, Núm. 23, pp. 8501-8508

  2. Printed electrodes structures as capacitive humidity sensors: A comparison

    Sensors and Actuators, A: Physical, Vol. 244, pp. 56-65

2015

  1. A printed capacitive-resistive double sensor for toluene and moisture sensing

    Sensors and Actuators, B: Chemical, Vol. 210, pp. 542-549

  2. Cantilever Fabrication by a Printing and Bonding Process

    Journal of Microelectromechanical Systems, Vol. 24, Núm. 4, pp. 880-886

  3. Comparative study of printed capacitive sensors

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

  4. Improved manufacturing process for printed cantilevers by using water removable sacrificial substrate

    Sensors and Actuators, A: Physical, Vol. 235, pp. 171-181

2014

  1. A novel electrode structure compared with interdigitated electrodes as capacitive sensor

    Sensors and Actuators, B: Chemical, Vol. 204, pp. 552-560

  2. Design and characterization of a low thermal drift capacitive humidity sensor by inkjet-printing

    Sensors and Actuators, B: Chemical, Vol. 195, pp. 123-131

2011

  1. Thermal drift reduction with multiple bias current for MOSFET dosimeters

    Physics in Medicine and Biology, Vol. 56, Núm. 12, pp. 3535-3550

2006

  1. Evaluation of a low-cost commercial mosfet as radiation dosimeter

    Sensors and Actuators, A: Physical, Vol. 125, Núm. 2, pp. 288-295

2005

  1. A simple model to analyze electron confinement and trapping in silicon nanodots

    2005 Spanish Conference on Electron Devices, Proceedings

2002

  1. Direct and trap-assisted elastic tunneling through ultrathin gate oxides

    Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5116-5124

  2. Generation-recombination noise in highly asymmetrical p-n junctions

    Journal of Applied Physics, Vol. 92, Núm. 1, pp. 320-329

2001

  1. A simple subthreshold swing model for short channel MOSFETs

    Solid-State Electronics, Vol. 45, Núm. 3, pp. 391-397

  2. Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

    Journal of Applied Physics, Vol. 90, Núm. 7, pp. 3396-3404

2000

  1. Effects of the inversion-layer centroid on the performance of double-gate MOSFET's

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141-146

1997

  1. Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628

  2. Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures

    Physical Review B - Condensed Matter and Materials Physics, Vol. 56, Núm. 15, pp. 9565-9574

1996

  1. Electric field dependence of the electron capture cross section of neutral traps in SiO2

    Journal of the Electrochemical Society, Vol. 143, Núm. 8, pp. 2687-2690