Publicaciones en colaboración con investigadores/as de Universitat Autònoma de Barcelona (19)

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

2023

  1. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  2. Variability in Resistive Memories

    Advanced Intelligent Systems, Vol. 5, Núm. 6

2022

  1. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

2021

  1. Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

    Journal of Applied Physics, Vol. 130, Núm. 5

  2. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  3. On the thermal models for resistive random access memory circuit simulation

    Nanomaterials, Vol. 11, Núm. 5

2020

  1. Neural network based analysis of random telegraph noise in resistive random access memories

    Semiconductor Science and Technology, Vol. 35, Núm. 2

2019

  1. Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits

    Solid-State Electronics, Vol. 157, pp. 25-33

2018

  1. An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach

    Journal of Applied Physics, Vol. 123, Núm. 15

  2. Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

    Journal of Applied Physics, Vol. 123, Núm. 1

2017

  1. A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 33

  2. Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 8, pp. 3159-3166

  3. SIM2RRAM : a physical model for RRAM devices simulation

    Journal of Computational Electronics, Vol. 16, Núm. 4, pp. 1095-1120

2016

  1. A new compact model for bipolar RRAMs based on truncated-cone conductive filaments - A Verilog-A approach

    Semiconductor Science and Technology, Vol. 31, Núm. 11

2015

  1. An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs

    Solid-State Electronics, Vol. 111, pp. 47-51

2014

  1. A comprehensive analysis on progressive reset transitions in RRAMs

    Journal of Physics D: Applied Physics, Vol. 47, Núm. 20

  2. Simulation of thermal reset transitions in resistive switching memories including quantum effects

    Journal of Applied Physics, Vol. 115, Núm. 21

2013

  1. An in-depth simulation study of thermal reset transitions in resistive switching memories

    Journal of Applied Physics, Vol. 114, Núm. 14