JUAN BAUTISTA
ROLDÁN ARANDA
CATEDRÁTICO DE UNIVERSIDAD
PEDRO
CARTUJO CASSINELLO
PROFESOR TITULAR DE UNIVERSIDAD
Publicacions en què col·labora amb PEDRO CARTUJO CASSINELLO (14)
2017
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SPICE modeling of RRAM thermal reset transitions for circuit simulation purposes
2017 Spanish Conference on Electron Devices, CDE 2017
2005
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Double gate silicon-on-insulator transistors: N+-n+ gate versus n+-p+ gate configuration
2005 Spanish Conference on Electron Devices, Proceedings
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Influence of confined acoustic phonons on the electron mobility in ultrathin silicon-on-insulator layers
Proceedings - Electrochemical Society
2003
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Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
Journal of Applied Physics, Vol. 94, Núm. 9, pp. 5732-5741
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Remote surface roughness scattering in ultrathin-oxide MOSFETs
European Solid-State Device Research Conference
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Strained-Si on Si1-xGex MOSFET mobility model
IEEE Transactions on Electron Devices, Vol. 50, Núm. 5, pp. 1408-1411
2002
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Coulomb scattering model for ultrathin silicon-on-insulator inversion layers
Applied Physics Letters, Vol. 80, Núm. 20, pp. 3835-3837
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Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
Journal of Applied Physics, Vol. 92, Núm. 1, pp. 288-295
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Monte Carlo simulation of electron mobility in silicon-on-insulator structures
Solid-State Electronics
2001
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Electron transport in silicon-on-insulator devices
Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620
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Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770
2000
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Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects
IEEE Electron Device Letters, Vol. 21, Núm. 5, pp. 239-241
1999
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Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
Journal of Applied Physics, Vol. 86, Núm. 11, pp. 6269-6275
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Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers
Journal of Applied Physics, Vol. 86, Núm. 12, pp. 6854-6863