JUAN BAUTISTA
ROLDÁN ARANDA
CATEDRÁTICO DE UNIVERSIDAD
FRANCISCO
JIMÉNEZ MOLINOS
CATEDRÁTICO DE UNIVERSIDAD
Publicacions en què col·labora amb FRANCISCO JIMÉNEZ MOLINOS (97)
2024
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Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors
ACS Applied Electronic Materials, Vol. 6, Núm. 2, pp. 1424-1433
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Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states
Materials Science in Semiconductor Processing, Vol. 179
2023
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A Comparison of Resistive Switching Parameters for Memristive Devices with HfO2Mono Layers and Al2O3/HfO2Bilayers at the Wafer Scale
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices
Physica Status Solidi (A) Applications and Materials Science, Vol. 220, Núm. 11
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Characterization and Modeling of Variability in Commercial Self-Directed Channel Memristors
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
Journal of Physics D: Applied Physics, Vol. 56, Núm. 36
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Parameter Extraction Methods for Assessing Device-to-Device and Cycle-to-Cycle Variability of Memristive Devices at Wafer Scale
IEEE Transactions on Electron Devices, Vol. 70, Núm. 1, pp. 360-365
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Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories
Micromachines, Vol. 14, Núm. 3
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Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance
Frontiers in Neuroscience, Vol. 17
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Variability and power enhancement of current controlled resistive switching devices
Microelectronic Engineering, Vol. 276
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Variability in Resistive Memories
Advanced Intelligent Systems, Vol. 5, Núm. 6
2022
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An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance
DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems
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An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
Chaos, Solitons and Fractals, Vol. 160
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Comprehensive study on unipolar RRAM charge conduction and stochastic features: A simulation approach
Journal of Physics D: Applied Physics, Vol. 55, Núm. 15
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Hardware implementation of self-organizing maps using memristors, a simulation study
DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems
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Parameter extraction techniques for the analysis and modeling of resistive memories
Microelectronic Engineering, Vol. 265
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Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
Solid-State Electronics, Vol. 194
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Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction
Journal of Applied Physics, Vol. 132, Núm. 19
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Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective
Microelectronic Engineering, Vol. 257