Publicaciones en las que colabora con JUAN ENRIQUE CARCELLER BELTRÁN (31)

2017

  1. Boundary condition model for the simulation of organic solar cells

    Organic Electronics, Vol. 48, pp. 85-95

2012

  1. Modeling the transition from ohmic to space charge limited current in organic semiconductors

    Organic Electronics, Vol. 13, Núm. 9, pp. 1700-1709

2011

  1. Compact modeling of the contact effects in organic thin film transistors

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  2. Contact effects in compact models of organic thin film transistors: Application to zinc phthalocyanine-based transistors

    Organic Electronics, Vol. 12, Núm. 5, pp. 832-842

  3. Learning in a virtual laboratory: Educational applications of three-dimensional animations

    International Journal of Innovation and Learning, Vol. 9, Núm. 3, pp. 325-337

  4. Miniband structure and photon absorption in regimented quantum dot systems

    Journal of Applied Physics

  5. Optoelectronic properties in InAs/GaAs quantum dots arrays systems

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

2009

  1. 3D animations used for teaching

    20th EAEEIE Annual Conference, EAEEIE 2009 - Formal Proceedings

  2. Improvement of the k · p approach for describing silicon quantum dots

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2005

  1. A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devices

    Solid-State Electronics

  2. A simple model for analysing the effects of band non-parabolicity in nanostructures

    Semiconductor Science and Technology, Vol. 20, Núm. 6, pp. 532-539

  3. A simple model to analyze electron confinement and trapping in silicon nanodots

    2005 Spanish Conference on Electron Devices, Proceedings

  4. Characterization of oxygen related defects in silicon p-n junctions

    2005 Spanish Conference on Electron Devices, Proceedings

  5. Effects of oxygen-related traps in silicon on the generation-recombination noise

    AIP Conference Proceedings

  6. Hole ionized impurity scattering in warped, non-parabolic and degenerate bands

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Effects of oxygen related defects on the electrical and thermal behavior of a n+ - p junction

    Journal of Applied Physics, Vol. 95, Núm. 2, pp. 561-570

2000

  1. Optimum design in a JFET for minimum generation-recombination noise

    Microelectronics Reliability, Vol. 40, Núm. 11, pp. 1965-1968

1997

  1. Gate voltage and temperature dependencies of up and down times of RTS in MOS structures: A theoretical study

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  2. Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures

    Physical Review B - Condensed Matter and Materials Physics, Vol. 56, Núm. 15, pp. 9565-9574

  3. Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

    Applied Physics Letters, Vol. 70, Núm. 16, pp. 2153-2155