Publicaciones (83) Publicaciones en las que ha participado algún/a investigador/a

2019

  1. Thermal study of multilayer resistive random access memories based on HfO 2 and Al 2 O 3 oxides

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 37, Núm. 1

  2. 3-D TCAD Study of the implications of channel width and interface states on FD-SOI Z2-FETs

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 6, pp. 2513-2519

  3. A Compact Charge and Surface Potential Model for III-V Cylindrical Nanowire Transistors

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 1, pp. 73-79

  4. A colorimetric strategy based on dynamic chemistry for direct detection of Trypanosomatid species

    Scientific Reports, Vol. 9, Núm. 1

  5. A compact model for III–V nanowire electrostatics including band non-parabolicity

    Journal of Computational Electronics, Vol. 18, Núm. 4, pp. 1229-1235

  6. A comparison of hazard perception and hazard prediction tests across China, Spain and the UK

    Accident Analysis and Prevention, Vol. 122, pp. 268-286

  7. A facile and efficient protocol for preparing residual-free single-walled carbon nanotube films for stable sensing applications

    Nanomaterials, Vol. 9, Núm. 3

  8. A new technique to analyze RTN signals in resistive memories

    Microelectronic Engineering, Vol. 215

  9. A practical approach to the design of a highly efficient PSFB DC-DC converter for server applications

    Energies, Vol. 12, Núm. 19

  10. A spline quasi-interpolation based method to obtain the reset voltage in Resistive RAMs in the charge-flux domain

    Journal of Computational and Applied Mathematics, Vol. 354, pp. 326-333

  11. A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

    Solid-State Electronics, Vol. 159, pp. 19-25

  12. An Optimized Measurement Algorithm for Gas Sensors Based on Carbon Nanotubes: Optimizing Sensor Performance and Hardware Resources

    IEEE Internet of Things Journal, Vol. 6, Núm. 5, pp. 9140-9146

  13. Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits

    Solid-State Electronics, Vol. 157, pp. 25-33

  14. Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

    Microelectronic Engineering, Vol. 214, pp. 104-109

  15. Assessment of three electrolyte-molecule electrostatic interaction models for 2D material based BioFETs

    Nanoscale Advances, Vol. 1, Núm. 3, pp. 1077-1085

  16. Band-like electron transport in 2D quantum dot periodic lattices: The effect of realistic size distributions

    Physical Chemistry Chemical Physics, Vol. 21, Núm. 46, pp. 25872-25879

  17. Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm

    Nature Electronics, Vol. 2, Núm. 9, pp. 412-419

  18. Characteristics of band modulation FET on sub 10 nm SOI

    Japanese Journal of Applied Physics, Vol. 58, Núm. SB

  19. Compact modeling of the effects of illumination on the contact region of organic phototransistors

    Organic Electronics, Vol. 70, pp. 113-121

  20. Comparative Study of Inkjet-Printed Silver Conductive Traces with Thermal and Electrical Sintering

    IEEE Access, Vol. 7, pp. 1909-1919