Publicaciones (23) Publicaciones en las que ha participado algún/a investigador/a

1997

  1. A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers

    Journal of Applied Physics, Vol. 81, Núm. 10, pp. 6857-6865

  2. A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in mosfet's

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1447-1453

  3. A detailed simulation study of the performance of β-silicon carbide MOSFETs and a comparison with their silicon counterparts

    Semiconductor Science and Technology, Vol. 12, Núm. 6, pp. 655-661

  4. Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  5. Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs.

    NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE

  6. Effects of the inversion layer centroid on MOSFET behavior

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 11, pp. 1915-1922

  7. Electron transport properties of quantized silicon carbide inversion layers

    Journal of Electronic Materials, Vol. 26, Núm. 3, pp. 203-207

  8. Estados electrónicos y transporte con potenciales unidimensionales confinantes y no confinantes

    Granada : Departamento de Electrónica y Tec[n, 1997

  9. Estudio del ruido de baja frecuencia en transistores de efecto campo

    Universidad de Granada

  10. Gate voltage and temperature dependencies of up and down times of RTS in MOS structures: A theoretical study

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  11. Gate voltage and temperature dependencies of up and down times of RTS in MOS structures: A theoretical study

    NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE

  12. Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628

  13. Influence of the doping profile and deep level trap characteristics on generation-recombination noise

    Journal of Applied Physics, Vol. 82, Núm. 7, pp. 3351-3357

  14. Minimización and-exor de funciones lógicas

    Universidad de Granada

  15. Modeling effects of electron-velocity overshoot in a MOSFET

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 5, pp. 841-846

  16. Modified boltzmann machine for an efficient distributed implementation

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

  17. Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs

    European Solid-State Device Research Conference

  18. Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures

    Physical Review B - Condensed Matter and Materials Physics, Vol. 56, Núm. 15, pp. 9565-9574

  19. Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

    Applied Physics Letters, Vol. 70, Núm. 16, pp. 2153-2155

  20. Simulación mediante el método de Monte Carlo y modelado del transporte electrónico en transistores MOS de canal corto

    Universidad de Granada