Departamento
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Publicaciones (23) Publicaciones en las que ha participado algún/a investigador/a
1997
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A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers
Journal of Applied Physics, Vol. 81, Núm. 10, pp. 6857-6865
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A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in mosfet's
IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1447-1453
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A detailed simulation study of the performance of β-silicon carbide MOSFETs and a comparison with their silicon counterparts
Semiconductor Science and Technology, Vol. 12, Núm. 6, pp. 655-661
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Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs
Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations
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Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs.
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE
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Effects of the inversion layer centroid on MOSFET behavior
IEEE Transactions on Electron Devices, Vol. 44, Núm. 11, pp. 1915-1922
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Electron transport properties of quantized silicon carbide inversion layers
Journal of Electronic Materials, Vol. 26, Núm. 3, pp. 203-207
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Estados electrónicos y transporte con potenciales unidimensionales confinantes y no confinantes
Granada : Departamento de Electrónica y Tec[n, 1997
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Estudio del ruido de baja frecuencia en transistores de efecto campo
Universidad de Granada
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Gate voltage and temperature dependencies of up and down times of RTS in MOS structures: A theoretical study
Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations
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Gate voltage and temperature dependencies of up and down times of RTS in MOS structures: A theoretical study
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE
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Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628
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Influence of the doping profile and deep level trap characteristics on generation-recombination noise
Journal of Applied Physics, Vol. 82, Núm. 7, pp. 3351-3357
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Minimización and-exor de funciones lógicas
Universidad de Granada
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Modeling effects of electron-velocity overshoot in a MOSFET
IEEE Transactions on Electron Devices, Vol. 44, Núm. 5, pp. 841-846
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Modified boltzmann machine for an efficient distributed implementation
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
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Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs
European Solid-State Device Research Conference
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Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures
Physical Review B - Condensed Matter and Materials Physics, Vol. 56, Núm. 15, pp. 9565-9574
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Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors
Applied Physics Letters, Vol. 70, Núm. 16, pp. 2153-2155
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Simulación mediante el método de Monte Carlo y modelado del transporte electrónico en transistores MOS de canal corto
Universidad de Granada