Departamento
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Publicaciones (21) Publicaciones en las que ha participado algún/a investigador/a
2003
-
A High Radix CORDIC Architecture Dedicated to Compute the Gaussian Potential Function in Neural Networks
Proceedings of SPIE - The International Society for Optical Engineering
-
A fast QRNS-based algorithm for the DCT and its field-programmable logic implementation
Journal of Circuits, Systems and Computers, Vol. 12, Núm. 1, pp. 111-123
-
A new remote Coulomb scattering model for ultrathin oxide MOSFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
-
Comparison Between Non-Equilibrium Green's Function and Monte Carlo Simulations for Transport in a Silicon Quantum Wire Structure
Journal of Computational Electronics, Vol. 2, Núm. 2-4, pp. 335-339
-
Design and implementation of RNS-based adaptive filters
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), Vol. 2778, pp. 1135-1138
-
Design and implementation of high-performance RNS wavelet processors using custom IC technologies
Journal of VLSI Signal Processing Systems for Signal, Image, and Video Technology, Vol. 34, Núm. 3, pp. 227-237
-
Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs
Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937
-
Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
Journal of Applied Physics, Vol. 94, Núm. 9, pp. 5732-5741
-
GA design of wire pre-fractal antennas and comparison with other euclidean geometries
IEEE Antennas and Wireless Propagation Letters, Vol. 2, pp. 238-241
-
Implementation of RNS-based distributed arithmetic discrete wavelet transform architectures using field-programmable logic
Journal of VLSI Signal Processing Systems for Signal, Image, and Video Technology, Vol. 33, Núm. 1-2, pp. 171-190
-
Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers
Applied Physics Letters, Vol. 83, Núm. 15, pp. 3120-3122
-
Low temperature transport properties of thin SOI MOSFETs
Superlattices and Microstructures
-
Mobility Enhancement via Volume Inversion in Double-Gate MOSFETs
IEEE International SOI Conference
-
Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices
Microelectronics Reliability
-
Monte Carlo simulation of remote-coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors
Applied Physics Letters, Vol. 82, Núm. 19, pp. 3251-3253
-
RNS-based implementation of 8 × 8 point 2D-DCT over field-programmable devices
Electronics Letters, Vol. 39, Núm. 1, pp. 21-23
-
Remote Coulomb scattering in metal-oxide-semiconductor field effect transistors: Screening by electrons in the gate
Applied Physics Letters, Vol. 83, Núm. 23, pp. 4848-4850
-
Remote surface roughness scattering in ultrathin-oxide MOSFETs
European Solid-State Device Research Conference
-
Scattering of electrons in silicon inversion layers by remote surface roughness
Journal of Applied Physics, Vol. 94, Núm. 1, pp. 392-399
-
Sistemas digitales
McGraw-Hill Interamericana de España