Publicaciones en las que colabora con JUAN ENRIQUE CARCELLER BELTRÁN (15)

2011

  1. Learning in a virtual laboratory: Educational applications of three-dimensional animations

    International Journal of Innovation and Learning, Vol. 9, Núm. 3, pp. 325-337

2005

  1. Characterization of oxygen related defects in silicon p-n junctions

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Effects of oxygen-related traps in silicon on the generation-recombination noise

    AIP Conference Proceedings

  3. Monte Carlo simulation of velocity modulation transistors

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Double gate silicon on insulator transistors. A Monte Carlo study

    Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945

  2. Effects of oxygen related defects on the electrical and thermal behavior of a n+ - p junction

    Journal of Applied Physics, Vol. 95, Núm. 2, pp. 561-570

2003

  1. Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

    Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937

  2. Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

    Journal of Applied Physics, Vol. 94, Núm. 9, pp. 5732-5741

2000

  1. Optimum design in a JFET for minimum generation-recombination noise

    Microelectronics Reliability, Vol. 40, Núm. 11, pp. 1965-1968

1997

  1. Gate voltage and temperature dependencies of up and down times of RTS in MOS structures: A theoretical study

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  2. Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures

    Physical Review B - Condensed Matter and Materials Physics, Vol. 56, Núm. 15, pp. 9565-9574

  3. Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

    Applied Physics Letters, Vol. 70, Núm. 16, pp. 2153-2155

1996

  1. Anomalous behaviour of the electric field in highly-compensated non-uniform semiconductors at low temperatures

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 99-103

1995

  1. Influence of the position of deep levels on generation-recombination noise

    Applied Physics Letters, Vol. 67, pp. 3581

  2. Monte Carlo study of the statistics of electron capture by shallow donors in silicon at low temperatures

    Physical Review B, Vol. 51, Núm. 20, pp. 14147-14151