Publicaciones en las que colabora con JUAN BAUTISTA ROLDÁN ARANDA (29)

2019

  1. Resistive switching and charge transport in laser-fabricated graphene oxide memristors: A time series and quantum point contact modeling approach

    Materials, Vol. 12, Núm. 22

2015

  1. A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners

    Solid-State Electronics, Vol. 111, pp. 180-187

2014

  1. On the numerical modeling of terahertz photoconductive antennas

    Journal of Infrared, Millimeter, and Terahertz Waves, Vol. 35, Núm. 5, pp. 432-444

  2. Pseudo-Boltzmann model for modeling the junctionless transistors

    Solid-State Electronics, Vol. 95, pp. 19-22

2013

  1. An analytical mobility model for square Gate-All-Around MOSFETs

    Solid-State Electronics, Vol. 90, pp. 18-22

  2. On the simulation of carrier dynamics in terahertz photoconductive antennas

    2013 7th European Conference on Antennas and Propagation, EuCAP 2013

2011

  1. An inversion-charge analytical model for square gate-all-around MOSFETs

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 9, pp. 2854-2861

2010

  1. An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933

  2. An analytical model for square GAA MOSFETs including quantum effects

    Solid-State Electronics, Vol. 54, Núm. 11, pp. 1463-1469

  3. Hole transport in DGSOI devices: Orientation and silicon thickness effects

    Solid-State Electronics, Vol. 54, Núm. 2, pp. 191-195

2009

  1. A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Monte Carlo simulation of nanoelectronic devices

    Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191

2008

  1. Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 1, pp. 411-416

2007

  1. An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms

    Semiconductor Science and Technology, Vol. 22, Núm. 4, pp. 348-353

  2. Modeling of inversion layer centroid and polysilicon depletion effects on ultrathin-gate-oxide mOSFET behavior: The influence of crystallographic orientation

    IEEE Transactions on Electron Devices, Vol. 54, Núm. 4, pp. 723-732

2006

  1. Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility

    Journal of Applied Physics, Vol. 100, Núm. 1

  2. Characterization of electron transport at high fields in silicon-on-insulator devices: A Monte Carlo study

    Semiconductor Science and Technology, Vol. 21, Núm. 1, pp. 81-86

2005

  1. Double gate silicon-on-insulator transistors: N+-n+ gate versus n+-p+ gate configuration

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Electron transport in silicon inversion slabs of nanometric thickness

    Proceedings of SPIE - The International Society for Optical Engineering

  3. Influence of confined acoustic phonons on the electron mobility in ultrathin silicon-on-insulator layers

    Proceedings - Electrochemical Society