Publicaciones en las que colabora con JUAN ENRIQUE CARCELLER BELTRÁN (12)

2001

  1. Evaluation of an equivalent hole effective mass for Si/SiGe structures

    VLSI Design

1999

  1. Experimental determination of the effective mobility in NMOSFETs: a comparative study

    Solid-State Electronics, Vol. 43, Núm. 4, pp. 701-707

1996

  1. A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region

    Solid-State Electronics, Vol. 39, Núm. 6, pp. 875-883

  2. Semi-empirical model of electron mobility in MOSFETS in strong inversion regime

    IEE Proceedings: Circuits, Devices and Systems, Vol. 143, Núm. 4, pp. 202-206

1995

  1. Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

    Solid State Electronics, Vol. 38, Núm. 3, pp. 611-614

  2. Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K

    Microelectronic Engineering, Vol. 28, Núm. 1-4, pp. 317-320

  3. Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 5, pp. 999-1004

  4. Oxide charge space correlation in inversion layers. II. Three-dimensional oxide charge distribution

    Semiconductor Science and Technology, Vol. 10, Núm. 5, pp. 592-600

  5. Universality of electron mobility curves in MOSFETs: a Monte Carlo study

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265

1993

  1. Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions

    Journal of Applied Physics, Vol. 74, Núm. 4, pp. 2605-2612

  2. An analytical expression for phonon-limited electron mobility in silicon-inversion layers

    Journal of Applied Physics, Vol. 74, Núm. 5, pp. 3289-3292

  3. Influence of the interface-state density on the electron mobility in silicon inversion layers

    Journal of Electronic Materials, Vol. 22, Núm. 9, pp. 1159-1163