Publicaciones en las que colabora con FRANCISCO JESÚS GÁMIZ PÉREZ (16)

2001

  1. Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

    Journal of Applied Physics, Vol. 90, Núm. 7, pp. 3396-3404

2000

  1. Effects of the inversion-layer centroid on the performance of double-gate MOSFET's

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141-146

  2. Effects of the inversionlayer centroid on the performance of doublegate MOSFET's

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141146

1997

  1. Effects of the inversion layer centroid on MOSFET behavior

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 11, pp. 1915-1922

  2. Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628

1996

  1. A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region

    Solid-State Electronics, Vol. 39, Núm. 6, pp. 875-883

1995

  1. A model for the quantized accumulation layer in metal-insulator-semiconductor structures

    Solid State Electronics, Vol. 38, Núm. 1, pp. 203-210

  2. Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

    Solid State Electronics, Vol. 38, Núm. 3, pp. 611-614

  3. Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K

    Microelectronic Engineering, Vol. 28, Núm. 1-4, pp. 317-320

  4. Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 5, pp. 999-1004

  5. Oxide charge space correlation in inversion layers. II. Three-dimensional oxide charge distribution

    Semiconductor Science and Technology, Vol. 10, Núm. 5, pp. 592-600

  6. Universality of electron mobility curves in MOSFETs: a Monte Carlo study

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265

1994

  1. Análisis y modelización de la movilidad en transistores Mos

    Granada : Departamento de Electrónica y Tecnología de Computadores, D.L. 1994

  2. Estudio y caracterización de la movilidad de electrones en transistores MOS por el método de Monte Carlo

    Universidad de Granada

1993

  1. An analytical expression for phonon-limited electron mobility in silicon-inversion layers

    Journal of Applied Physics, Vol. 74, Núm. 5, pp. 3289-3292

  2. Influence of the interface-state density on the electron mobility in silicon inversion layers

    Journal of Electronic Materials, Vol. 22, Núm. 9, pp. 1159-1163