FRANCISCO JESÚS
GÁMIZ PÉREZ
CATEDRÁTICO DE UNIVERSIDAD
JESÚS
BANQUERI OZÁEZ
CATEDRÁTICO DE UNIVERSIDAD
Publications by the researcher in collaboration with JESÚS BANQUERI OZÁEZ (16)
2001
-
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
Journal of Applied Physics, Vol. 90, Núm. 7, pp. 3396-3404
2000
-
Effects of the inversion-layer centroid on the performance of double-gate MOSFET's
IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141-146
-
Effects of the inversionlayer centroid on the performance of doublegate MOSFET's
IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141146
1997
-
Effects of the inversion layer centroid on MOSFET behavior
IEEE Transactions on Electron Devices, Vol. 44, Núm. 11, pp. 1915-1922
-
Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628
1996
-
A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region
Solid-State Electronics, Vol. 39, Núm. 6, pp. 875-883
1995
-
A model for the quantized accumulation layer in metal-insulator-semiconductor structures
Solid State Electronics, Vol. 38, Núm. 1, pp. 203-210
-
Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs
Solid State Electronics, Vol. 38, Núm. 3, pp. 611-614
-
Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K
Microelectronic Engineering, Vol. 28, Núm. 1-4, pp. 317-320
-
Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's
IEEE Transactions on Electron Devices, Vol. 42, Núm. 5, pp. 999-1004
-
Oxide charge space correlation in inversion layers. II. Three-dimensional oxide charge distribution
Semiconductor Science and Technology, Vol. 10, Núm. 5, pp. 592-600
-
Universality of electron mobility curves in MOSFETs: a Monte Carlo study
IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265
1994
-
Análisis y modelización de la movilidad en transistores Mos
Granada : Departamento de Electrónica y Tecnología de Computadores, D.L. 1994
-
Estudio y caracterización de la movilidad de electrones en transistores MOS por el método de Monte Carlo
Universidad de Granada
1993
-
An analytical expression for phonon-limited electron mobility in silicon-inversion layers
Journal of Applied Physics, Vol. 74, Núm. 5, pp. 3289-3292
-
Influence of the interface-state density on the electron mobility in silicon inversion layers
Journal of Electronic Materials, Vol. 22, Núm. 9, pp. 1159-1163