FRANCISCO JESÚS
GÁMIZ PÉREZ
CATEDRÁTICO DE UNIVERSIDAD
FRANCISCO
JIMÉNEZ MOLINOS
CATEDRÁTICO DE UNIVERSIDAD
Publications dans lesquelles il/elle collabore avec FRANCISCO JIMÉNEZ MOLINOS (21)
2013
-
An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes
Solid-State Electronics, Vol. 79, pp. 92-97
-
An in-depth simulation study of thermal reset transitions in resistive switching memories
Journal of Applied Physics, Vol. 114, Núm. 14
2011
-
Ultrathin n-Channel and p-Channel SOI MOSFETs
Engineering Materials (Springer Science and Business Media B.V.), pp. 169-185
2010
-
An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects
IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933
-
Hole transport in DGSOI devices: Orientation and silicon thickness effects
Solid-State Electronics, Vol. 54, Núm. 2, pp. 191-195
2009
-
Monte Carlo simulation of nanoelectronic devices
Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191
2008
-
Coulomb scattering in high- κ gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors
Journal of Applied Physics, Vol. 104, Núm. 6
2007
-
Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices
Journal of Computational Electronics, Vol. 6, Núm. 1-3, pp. 41-44
2005
-
Double gate silicon-on-insulator transistors: N+-n+ gate versus n+-p+ gate configuration
2005 Spanish Conference on Electron Devices, Proceedings
2004
-
Double gate silicon-on-insulator transistors: N+-n+ gate versus n+-p+ gate configuration
ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
-
Image and exchange-correlation effects in double gate silicon-on-insulator transistors
Microelectronic Engineering
2003
-
Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers
Applied Physics Letters, Vol. 83, Núm. 15, pp. 3120-3122
-
Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices
Microelectronics Reliability
-
Remote surface roughness scattering in ultrathin-oxide MOSFETs
European Solid-State Device Research Conference
2002
-
Coulomb scattering model for ultrathin silicon-on-insulator inversion layers
Applied Physics Letters, Vol. 80, Núm. 20, pp. 3835-3837
-
Direct and trap-assisted elastic tunneling through ultrathin gate oxides
Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5116-5124
-
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
Journal of Applied Physics, Vol. 92, Núm. 1, pp. 288-295
-
Monte Carlo simulation of electron mobility in silicon-on-insulator structures
Solid-State Electronics
2001
-
Electron transport in silicon-on-insulator devices
Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620
-
Electron transport in ultrathin double-gate SOI devices
Microelectronic Engineering