FRANCISCO JAVIER
GARCÍA RUIZ
CATEDRÁTICO DE UNIVERSIDAD
FRANCISCO JESÚS
GÁMIZ PÉREZ
CATEDRÁTICO DE UNIVERSIDAD
FRANCISCO JESÚS GÁMIZ PÉREZ-rekin lankidetzan egindako argitalpenak (53)
2019
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A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations
Solid-State Electronics, Vol. 159, pp. 19-25
2018
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3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
Solid-State Electronics, Vol. 143, pp. 49-55
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Scaling FDSOI technology down to 7 nm - A physical modeling study based on 3D phase-space subband boltzmann transport
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
2017
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Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires
Journal of Physics D: Applied Physics, Vol. 50, Núm. 49
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Multi-subband ensemble Monte Carlo simulations of scaled GAA MOSFETs
Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
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Three-dimensional multi-subband simulation of scaled FinFETs
European Solid-State Device Research Conference
2016
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On the influence of the back-gate bias on InGaAs Trigate MOSFETs
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
2015
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Analytic Potential and Charge Model of Semiconductor Quantum Wells
IEEE Transactions on Electron Devices, Vol. 62, Núm. 12, pp. 4186-4191
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Analytic drain current model for III-V cylindrical nanowire transistors
Journal of Applied Physics, Vol. 118, Núm. 4
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Impact of the back-gate biasing on trigate MOSFET electron mobility
IEEE Transactions on Electron Devices, Vol. 62, Núm. 1, pp. 224-227
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Mobility and capacitance comparison in scaled InGaAs versus Si trigate MOSFETs
IEEE Electron Device Letters, Vol. 36, Núm. 2, pp. 114-116
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Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors
Solid-State Electronics, Vol. 114, pp. 30-34
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The unexpected beneficial effect of the L -valley population on the electron mobility of GaAs nanowires
Applied Physics Letters, Vol. 106, Núm. 2
2014
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3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects
Solid-State Electronics, Vol. 92, pp. 28-34
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Influence of alloy disorder scattering on the hole mobility of SiGe nanowires
Journal of Applied Physics, Vol. 116, Núm. 24
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Size-dependent electron mobility in InAs nanowires
European Solid-State Device Research Conference
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Theoretical interpretation of the electron mobility behavior in InAs nanowires
Journal of Applied Physics, Vol. 116, Núm. 17