FRANCISCO JAVIER
GARCÍA RUIZ
CATEDRÁTICO DE UNIVERSIDAD
ISABEL MARÍA
TIENDA LUNA
PROFESORA TITULAR DE UNIVERSIDAD
Publicacións nas que colabora con ISABEL MARÍA TIENDA LUNA (28)
2019
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Memcapacitor emulator based on the Miller effect
International Journal of Circuit Theory and Applications, Vol. 47, Núm. 4, pp. 572-579
2016
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On the influence of the back-gate bias on InGaAs Trigate MOSFETs
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
2015
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Analytic Potential and Charge Model of Semiconductor Quantum Wells
IEEE Transactions on Electron Devices, Vol. 62, Núm. 12, pp. 4186-4191
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Impact of the back-gate biasing on trigate MOSFET electron mobility
IEEE Transactions on Electron Devices, Vol. 62, Núm. 1, pp. 224-227
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Mobility and capacitance comparison in scaled InGaAs versus Si trigate MOSFETs
IEEE Electron Device Letters, Vol. 36, Núm. 2, pp. 114-116
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The unexpected beneficial effect of the L -valley population on the electron mobility of GaAs nanowires
Applied Physics Letters, Vol. 106, Núm. 2
2014
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Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects
Solid-State Electronics, Vol. 92, pp. 28-34
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Size-dependent electron mobility in InAs nanowires
European Solid-State Device Research Conference
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Theoretical interpretation of the electron mobility behavior in InAs nanowires
Journal of Applied Physics, Vol. 116, Núm. 17
2013
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An analytical mobility model for square Gate-All-Around MOSFETs
Solid-State Electronics, Vol. 90, pp. 18-22
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Analytical gate capacitance modeling of III-V nanowire transistors
IEEE Transactions on Electron Devices, Vol. 60, Núm. 5, pp. 1590-1599
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Effect of confined acoustic phonons on the electron mobility of rectangular nanowires
Applied Physics Letters, Vol. 103, Núm. 16
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Influence of the back-gate bias on the electron mobility of trigate MOSFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2012
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Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics, Vol. 112, Núm. 8
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Effect of interfacial states on the technological variability of trigate MOSFETs
2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
2011
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Influence of orientation, geometry, and strain on electron distribution in silicon gate-all-around (GAA) MOSFETs
IEEE Transactions on Electron Devices, Vol. 58, Núm. 10, pp. 3350-3357
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Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs
Solid-State Electronics
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Surface roughness scattering model for arbitrarily oriented silicon nanowires
Journal of Applied Physics, Vol. 110, Núm. 8
2010
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A model of the gate capacitance of surrounding gate transistors: Comparison with double-gate MOSFETs
IEEE Transactions on Electron Devices, Vol. 57, Núm. 10, pp. 2477-2483
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Effects of deviations in the cross-section of square Nanowires
2010 14th International Workshop on Computational Electronics, IWCE 2010