Publicaciones en las que colabora con PEDRO CARTUJO ESTÉBANEZ (32)

2005

  1. Monte Carlo simulation of velocity modulation transistors

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Double gate silicon on insulator transistors. A Monte Carlo study

    Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945

  2. Image and exchange-correlation effects in double gate silicon-on-insulator transistors

    Microelectronic Engineering

2003

  1. Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

    Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937

  2. Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers

    Applied Physics Letters, Vol. 83, Núm. 15, pp. 3120-3122

  3. Monte Carlo simulation of remote-coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors

    Applied Physics Letters, Vol. 82, Núm. 19, pp. 3251-3253

  4. Strained-Si on Si1-xGex MOSFET mobility model

    IEEE Transactions on Electron Devices, Vol. 50, Núm. 5, pp. 1408-1411

2001

  1. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

2000

  1. Influence of technological parameters on the behavior of the hole effective mass in SiGe structures

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 1978-1982

  2. Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects

    Semiconductor Science and Technology, Vol. 15, Núm. 2, pp. 85-90

1999

  1. Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

    Computer Physics Communications, Vol. 121, pp. 547-549

1998

  1. A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251

  2. Monte carlo simulation of electron transport properties in extremely thin SOI MOSFET's

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 5, pp. 1122-1126

1997

  1. Study of the effects of a stepped doping profile in short-channel mosfet's

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1425-1431

  2. The dependence of the electron mobility on the longitudinal electric field in MOSFETs

    Semiconductor Science and Technology, Vol. 12, Núm. 3, pp. 321-330

1996

  1. Electron velocity overshoot in strained Si/Si1-xGexMOSFETs

    European Solid-State Device Research Conference

  2. Strained Si/SiGe heterostructures at low temperatures. A Monte Carlo study

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 87-92

1995

  1. Universality of electron mobility curves in MOSFETs: a Monte Carlo study

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265

1993

  1. Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions

    Journal of Applied Physics, Vol. 74, Núm. 4, pp. 2605-2612

  2. An analytical expression for phonon-limited electron mobility in silicon-inversion layers

    Journal of Applied Physics, Vol. 74, Núm. 5, pp. 3289-3292