Publicaciones (107) Publicaciones de FRANCISCO JIMÉNEZ MOLINOS

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

  2. Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

    ACS Applied Electronic Materials, Vol. 6, Núm. 2, pp. 1424-1433

2023

  1. A Comparison of Resistive Switching Parameters for Memristive Devices with HfO2Mono Layers and Al2O3/HfO2Bilayers at the Wafer Scale

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  2. A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices

    Physica Status Solidi (A) Applications and Materials Science, Vol. 220, Núm. 11

  3. Characterization and Modeling of Variability in Commercial Self-Directed Channel Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  4. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  5. Parameter Extraction Methods for Assessing Device-to-Device and Cycle-to-Cycle Variability of Memristive Devices at Wafer Scale

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 1, pp. 360-365

  6. Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories

    Micromachines, Vol. 14, Núm. 3

  7. Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  8. TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance

    Frontiers in Neuroscience, Vol. 17

  9. Variability and power enhancement of current controlled resistive switching devices

    Microelectronic Engineering, Vol. 276

  10. Variability in Resistive Memories

    Advanced Intelligent Systems, Vol. 5, Núm. 6

2022

  1. An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance

    DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems

  2. An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

    Chaos, Solitons and Fractals, Vol. 160

  3. Comprehensive study on unipolar RRAM charge conduction and stochastic features: A simulation approach

    Journal of Physics D: Applied Physics, Vol. 55, Núm. 15

  4. Hardware implementation of self-organizing maps using memristors, a simulation study

    DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems

  5. Parameter extraction techniques for the analysis and modeling of resistive memories

    Microelectronic Engineering, Vol. 265

  6. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

  7. Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

    Journal of Applied Physics, Vol. 132, Núm. 19

  8. Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective

    Microelectronic Engineering, Vol. 257