Publicaciones en las que colabora con PEDRO CARTUJO CASSINELLO (14)

2017

  1. SPICE modeling of RRAM thermal reset transitions for circuit simulation purposes

    2017 Spanish Conference on Electron Devices, CDE 2017

2005

  1. Double gate silicon-on-insulator transistors: N+-n+ gate versus n+-p+ gate configuration

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Influence of confined acoustic phonons on the electron mobility in ultrathin silicon-on-insulator layers

    Proceedings - Electrochemical Society

2003

  1. Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

    Journal of Applied Physics, Vol. 94, Núm. 9, pp. 5732-5741

  2. Remote surface roughness scattering in ultrathin-oxide MOSFETs

    European Solid-State Device Research Conference

  3. Strained-Si on Si1-xGex MOSFET mobility model

    IEEE Transactions on Electron Devices, Vol. 50, Núm. 5, pp. 1408-1411

2002

  1. Coulomb scattering model for ultrathin silicon-on-insulator inversion layers

    Applied Physics Letters, Vol. 80, Núm. 20, pp. 3835-3837

  2. Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates

    Journal of Applied Physics, Vol. 92, Núm. 1, pp. 288-295

  3. Monte Carlo simulation of electron mobility in silicon-on-insulator structures

    Solid-State Electronics

2001

  1. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

  2. Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770

2000

  1. Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

    IEEE Electron Device Letters, Vol. 21, Núm. 5, pp. 239-241

1999

  1. Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 86, Núm. 11, pp. 6269-6275

  2. Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 86, Núm. 12, pp. 6854-6863