Publicaciones (59) Publicaciones de PEDRO CARTUJO ESTÉBANEZ

2023

  1. The environmental significance of biotechnologically treated insoluble phosphates and P-solubilizing microorganisms

    Biofertilizers: Agricultural Uses, Management and Environmental Effects (Nova Science Publishers, Inc.), pp. 117-137

2021

  1. Ensuring agricultural sustainability through remote sensing in the era of agriculture 5.0

    Applied Sciences (Switzerland), Vol. 11, Núm. 13

2020

  1. Remotely piloted aircraft (RPA) in agriculture: A pursuit of sustainability

    Agronomy, Vol. 11, Núm. 1

2005

  1. Monte Carlo simulation of velocity modulation transistors

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Double gate silicon on insulator transistors. A Monte Carlo study

    Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945

  2. Image and exchange-correlation effects in double gate silicon-on-insulator transistors

    Microelectronic Engineering

2003

  1. Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

    Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937

  2. Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers

    Applied Physics Letters, Vol. 83, Núm. 15, pp. 3120-3122

  3. Monte Carlo simulation of remote-coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors

    Applied Physics Letters, Vol. 82, Núm. 19, pp. 3251-3253

  4. Strained-Si on Si1-xGex MOSFET mobility model

    IEEE Transactions on Electron Devices, Vol. 50, Núm. 5, pp. 1408-1411

2002

  1. Direct and trap-assisted elastic tunneling through ultrathin gate oxides

    Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5116-5124

  2. Temperature dependence of generation-recombination noise in p-n junctions

    Journal De Physique. IV : JP

2001

  1. Contribution of injection in current noise due to generation and recombination of carriers in p-n junctions

    Journal of Applied Physics, Vol. 90, Núm. 8, pp. 3998-4006

  2. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

  3. Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770

  4. Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

    IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449

2000

  1. Influence of technological parameters on the behavior of the hole effective mass in SiGe structures

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 1978-1982

  2. Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects

    Semiconductor Science and Technology, Vol. 15, Núm. 2, pp. 85-90

1999

  1. Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

    Computer Physics Communications, Vol. 121, pp. 547-549

1998

  1. A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251