Publicaciones en las que colabora con JUAN ANTONIO JIMÉNEZ TEJADA (21)

2012

  1. DC and low-frequency noise optimization of four-gate transistors

    2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

  2. Dependence of generation-recombination noise with gate voltage in FD SOI MOSFETs

    IEEE Transactions on Electron Devices, Vol. 59, Núm. 10, pp. 2780-2786

  3. Effects of gate oxide and junction nonuniformity on the DC and low-frequency noise performance of four-gate transistors

    IEEE Transactions on Electron Devices, Vol. 59, Núm. 2, pp. 459-467

2011

  1. Learning in a virtual laboratory: Educational applications of three-dimensional animations

    International Journal of Innovation and Learning, Vol. 9, Núm. 3, pp. 325-337

  2. Miniband structure and photon absorption in regimented quantum dot systems

    Journal of Applied Physics

  3. Optoelectronic properties in InAs/GaAs quantum dots arrays systems

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

2010

  1. Localization and quantification of noise sources in four-gate field-effect-transistors

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

  2. Modeling impact of electric field and strain on the leakage of embedded SiGe source/drain junctions

    2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

2009

  1. 3D animations used for teaching

    20th EAEEIE Annual Conference, EAEEIE 2009 - Formal Proceedings

  2. Effect of traps in the performance of four gate transistors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Improvement of the k · p approach for describing silicon quantum dots

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. A low-frequency noise model for four-gate field-effect transistors

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 3, pp. 896-903

2007

  1. A multijunction solar cell simulation program for the development of concentration systems

    2007 Spanish Conference on Electron Devices, Proceedings

  2. Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy

    2007 Spanish Conference on Electron Devices, Proceedings

2006

  1. Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy

    Applied Physics Letters, Vol. 89, Núm. 11

2005

  1. A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devices

    Solid-State Electronics

  2. A simple model for analysing the effects of band non-parabolicity in nanostructures

    Semiconductor Science and Technology, Vol. 20, Núm. 6, pp. 532-539

  3. A simple model to analyze electron confinement and trapping in silicon nanodots

    2005 Spanish Conference on Electron Devices, Proceedings

  4. Characterization of oxygen related defects in silicon p-n junctions

    2005 Spanish Conference on Electron Devices, Proceedings

  5. Effects of oxygen-related traps in silicon on the generation-recombination noise

    AIP Conference Proceedings