Instituto de Microelectrónica de Barcelona -ko ikertzaileekin lankidetzan egindako argitalpenak (45)

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

  2. Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

    Materials Science in Semiconductor Processing, Vol. 179

  3. Variability in HfO2-based memristors described with a new bidimensional statistical technique

    Nanoscale

2023

  1. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  2. Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories

    Micromachines, Vol. 14, Núm. 3

  3. Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  4. Variability and power enhancement of current controlled resistive switching devices

    Microelectronic Engineering, Vol. 276

  5. Variability in Resistive Memories

    Advanced Intelligent Systems, Vol. 5, Núm. 6

2022

  1. An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance

    DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems

  2. An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

    Chaos, Solitons and Fractals, Vol. 160

  3. Comprehensive study on unipolar RRAM charge conduction and stochastic features: A simulation approach

    Journal of Physics D: Applied Physics, Vol. 55, Núm. 15

  4. Parameter extraction techniques for the analysis and modeling of resistive memories

    Microelectronic Engineering, Vol. 265

  5. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

  6. Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

    Journal of Applied Physics, Vol. 132, Núm. 19

  7. Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective

    Microelectronic Engineering, Vol. 257

2021

  1. Analysis of the Characteristic Current Fluctuations in the High Resistance State of HfO2-based Memristors

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

    Journal of Applied Physics, Vol. 130, Núm. 5

  3. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  4. Simulation of serial RRAM cell based on a Verilog-A compact model

    36th Conference on Design of Circuits and Integrated Systems, DCIS 2021

  5. Standards for the Characterization of Endurance in Resistive Switching Devices

    ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231