ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
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Instituto de Microelectrónica de Barcelona
Barcelona, EspañaInstituto de Microelectrónica de Barcelona -ko ikertzaileekin lankidetzan egindako argitalpenak (45)
2024
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A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
Materials Science in Semiconductor Processing, Vol. 169
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Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states
Materials Science in Semiconductor Processing, Vol. 179
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Variability in HfO2-based memristors described with a new bidimensional statistical technique
Nanoscale, Vol. 16, Núm. 22, pp. 10812-10818
2023
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Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
Journal of Physics D: Applied Physics, Vol. 56, Núm. 36
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Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories
Micromachines, Vol. 14, Núm. 3
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Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Variability and power enhancement of current controlled resistive switching devices
Microelectronic Engineering, Vol. 276
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Variability in Resistive Memories
Advanced Intelligent Systems, Vol. 5, Núm. 6
2022
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An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance
DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems
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An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
Chaos, Solitons and Fractals, Vol. 160
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Comprehensive study on unipolar RRAM charge conduction and stochastic features: A simulation approach
Journal of Physics D: Applied Physics, Vol. 55, Núm. 15
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Parameter extraction techniques for the analysis and modeling of resistive memories
Microelectronic Engineering, Vol. 265
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Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
Solid-State Electronics, Vol. 194
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Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction
Journal of Applied Physics, Vol. 132, Núm. 19
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Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective
Microelectronic Engineering, Vol. 257
2021
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Analysis of the Characteristic Current Fluctuations in the High Resistance State of HfO2-based Memristors
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
Journal of Applied Physics, Vol. 130, Núm. 5
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Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Simulation of serial RRAM cell based on a Verilog-A compact model
36th Conference on Design of Circuits and Integrated Systems, DCIS 2021
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Standards for the Characterization of Endurance in Resistive Switching Devices
ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231