Artículos (15) Publicaciones en las que ha participado algún/a investigador/a

2004

  1. A comprehensive study of velocity overshoot effects in double gate silicon on insulator transistors

    Semiconductor Science and Technology, Vol. 19, Núm. 3, pp. 393-398

  2. Accurate deterministic numerical simulation of p-n junctions

    Journal of Computational Electronics, Vol. 3, Núm. 3-4, pp. 235-238

  3. An efficient Monte Carlo procedure for studying hole transport in doped semiconductors

    Journal of Computational Electronics, Vol. 3, Núm. 3-4, pp. 329-332

  4. Area*Time optimized hogenauer channelizer design using FPL devices

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), Vol. 3203, pp. 384-393

  5. Detecting network communities: A new systematic and efficient algorithm

    Journal of Statistical Mechanics: Theory and Experiment

  6. Double gate silicon on insulator transistors. A Monte Carlo study

    Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945

  7. Effects of oxygen related defects on the electrical and thermal behavior of a n+ - p junction

    Journal of Applied Physics, Vol. 95, Núm. 2, pp. 561-570

  8. Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K

    Applied Physics Letters, Vol. 84, Núm. 13, pp. 2298-2300

  9. Gate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors

    Applied Physics Letters, Vol. 85, Núm. 22, pp. 5442-5444

  10. La naturaleza de la luz en la época del doctor Cerdá y Rico (1848-1921)

    Contraluz: Revista de la Asociación Cultural Arturo Cerdá y Rico, Núm. 1, pp. 119-134

  11. Monte Carlo simulation of electron velocity overshoot in DGSOI MOSFETs

    Journal of Computational Electronics, Vol. 3, Núm. 3-4, pp. 295-298

  12. Simulation and modelling of transport properties in strained-Si and strained-Si/SiGe-on-insulator MOSFETs

    Solid-State Electronics, Vol. 48, Núm. 8, pp. 1347-1355

  13. Temperature behaviour of electron mobility in double-gate silicon on insulator transistors

    Semiconductor Science and Technology, Vol. 19, Núm. 1, pp. 113-119

  14. The statistical geometry of scale-free random trees

    Journal of Physics A: Mathematical and General, Vol. 37, Núm. 23, pp. 6003-6025

  15. Velocity overshoot in ultrathin double-gate silicon-on-insulator transistors

    Applied Physics Letters, Vol. 84, Núm. 2, pp. 299-301