Departamento
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Artículos (15) Publicaciones en las que ha participado algún/a investigador/a
2004
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A comprehensive study of velocity overshoot effects in double gate silicon on insulator transistors
Semiconductor Science and Technology, Vol. 19, Núm. 3, pp. 393-398
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Accurate deterministic numerical simulation of p-n junctions
Journal of Computational Electronics, Vol. 3, Núm. 3-4, pp. 235-238
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An efficient Monte Carlo procedure for studying hole transport in doped semiconductors
Journal of Computational Electronics, Vol. 3, Núm. 3-4, pp. 329-332
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Area*Time optimized hogenauer channelizer design using FPL devices
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), Vol. 3203, pp. 384-393
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Detecting network communities: A new systematic and efficient algorithm
Journal of Statistical Mechanics: Theory and Experiment
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Double gate silicon on insulator transistors. A Monte Carlo study
Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945
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Effects of oxygen related defects on the electrical and thermal behavior of a n+ - p junction
Journal of Applied Physics, Vol. 95, Núm. 2, pp. 561-570
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Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K
Applied Physics Letters, Vol. 84, Núm. 13, pp. 2298-2300
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Gate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors
Applied Physics Letters, Vol. 85, Núm. 22, pp. 5442-5444
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La naturaleza de la luz en la época del doctor Cerdá y Rico (1848-1921)
Contraluz: Revista de la Asociación Cultural Arturo Cerdá y Rico, Núm. 1, pp. 119-134
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Monte Carlo simulation of electron velocity overshoot in DGSOI MOSFETs
Journal of Computational Electronics, Vol. 3, Núm. 3-4, pp. 295-298
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Simulation and modelling of transport properties in strained-Si and strained-Si/SiGe-on-insulator MOSFETs
Solid-State Electronics, Vol. 48, Núm. 8, pp. 1347-1355
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Temperature behaviour of electron mobility in double-gate silicon on insulator transistors
Semiconductor Science and Technology, Vol. 19, Núm. 1, pp. 113-119
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The statistical geometry of scale-free random trees
Journal of Physics A: Mathematical and General, Vol. 37, Núm. 23, pp. 6003-6025
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Velocity overshoot in ultrathin double-gate silicon-on-insulator transistors
Applied Physics Letters, Vol. 84, Núm. 2, pp. 299-301