Publicaciones (16) Publicaciones en las que ha participado algún/a investigador/a

1996

  1. A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1-xGex channel MOSFETs

    Journal of Applied Physics, Vol. 80, Núm. 9, pp. 5121-5128

  2. A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region

    Solid-State Electronics, Vol. 39, Núm. 6, pp. 875-883

  3. Anomalous behaviour of the electric field in highly-compensated non-uniform semiconductors at low temperatures

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 99-103

  4. Capture process by shallow donors in silicon at low temperatures

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 105-110

  5. Coulomb scattering in strained-silicon inversion layers on Si1-xGex substrates

    Applied Physics Letters, Vol. 69, Núm. 6, pp. 797-799

  6. Diseño lógico

    McGraw-Hill Interamericana de España

  7. Electric field dependence of the electron capture cross section of neutral traps in SiO2

    Journal of the Electrochemical Society, Vol. 143, Núm. 8, pp. 2687-2690

  8. Electron velocity overshoot in strained Si/Si1-xGexMOSFETs

    European Solid-State Device Research Conference

  9. Electron velocity saturation in quantized silicon carbide inversion layers

    Applied Physics Letters, Vol. 69, Núm. 15, pp. 2219-2221

  10. Influence of the doping profile on electron mobility in a MOSFET

    IEEE Transactions on Electron Devices, Vol. 43, Núm. 11, pp. 2023-2025

  11. Influence of the doping profile on electron mobility in a mosfet

    IEEE Transactions on Electron Devices, Vol. 43, Núm. 11, pp. 20232025

  12. Low-temperature modelling of electron-velocity-overshoot effects on 70-250 nm gate-length MOSFETs

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 13-18

  13. Propuestas para incorporar reusabilidad en un lenguaje basado en el modelo Occam-CSP

    II Jornadas de informática. Actas: Almuñécar (Granada), 15 al 19 de julio 1996

  14. Semi-empirical model of electron mobility in MOSFETS in strong inversion regime

    IEE Proceedings: Circuits, Devices and Systems, Vol. 143, Núm. 4, pp. 202-206

  15. Strained Si/SiGe heterostructures at low temperatures. A Monte Carlo study

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 87-92

  16. TESEO: un nuevo método algebraico para ATPG

    Universidad de Granada