Departamento
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Publicaciones (16) Publicaciones en las que ha participado algún/a investigador/a
1996
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A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1-xGex channel MOSFETs
Journal of Applied Physics, Vol. 80, Núm. 9, pp. 5121-5128
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A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region
Solid-State Electronics, Vol. 39, Núm. 6, pp. 875-883
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Anomalous behaviour of the electric field in highly-compensated non-uniform semiconductors at low temperatures
Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 99-103
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Capture process by shallow donors in silicon at low temperatures
Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 105-110
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Coulomb scattering in strained-silicon inversion layers on Si1-xGex substrates
Applied Physics Letters, Vol. 69, Núm. 6, pp. 797-799
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Diseño lógico
McGraw-Hill Interamericana de España
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Electric field dependence of the electron capture cross section of neutral traps in SiO2
Journal of the Electrochemical Society, Vol. 143, Núm. 8, pp. 2687-2690
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Electron velocity overshoot in strained Si/Si1-xGexMOSFETs
European Solid-State Device Research Conference
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Electron velocity saturation in quantized silicon carbide inversion layers
Applied Physics Letters, Vol. 69, Núm. 15, pp. 2219-2221
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Influence of the doping profile on electron mobility in a MOSFET
IEEE Transactions on Electron Devices, Vol. 43, Núm. 11, pp. 2023-2025
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Influence of the doping profile on electron mobility in a mosfet
IEEE Transactions on Electron Devices, Vol. 43, Núm. 11, pp. 20232025
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Low-temperature modelling of electron-velocity-overshoot effects on 70-250 nm gate-length MOSFETs
Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 13-18
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Propuestas para incorporar reusabilidad en un lenguaje basado en el modelo Occam-CSP
II Jornadas de informática. Actas: Almuñécar (Granada), 15 al 19 de julio 1996
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Semi-empirical model of electron mobility in MOSFETS in strong inversion regime
IEE Proceedings: Circuits, Devices and Systems, Vol. 143, Núm. 4, pp. 202-206
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Strained Si/SiGe heterostructures at low temperatures. A Monte Carlo study
Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 87-92
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TESEO: un nuevo método algebraico para ATPG
Universidad de Granada