Departamento
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Publicaciones (19) Publicaciones en las que ha participado algún/a investigador/a
2001
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A simple subthreshold swing model for short channel MOSFETs
Solid-State Electronics, Vol. 45, Núm. 3, pp. 391-397
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A special march test to detect delay coupling faults for RAMS
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
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Contribution of injection in current noise due to generation and recombination of carriers in p-n junctions
Journal of Applied Physics, Vol. 90, Núm. 8, pp. 3998-4006
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Control PID sobre dispositivos programables
Mundo electrónico, Núm. 323, pp. 60-61
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Design of RNS-based distributed arithmetic DWT filterbanks
ICASSP, IEEE International Conference on Acoustics, Speech and Signal Processing - Proceedings, Vol. 2, pp. 1193-1196
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Electron transport in silicon-on-insulator devices
Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620
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Electron transport in ultrathin double-gate SOI devices
Microelectronic Engineering
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Evaluation of an equivalent hole effective mass for Si/SiGe structures
VLSI Design
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Implementation of a communications using FPGAs and RNS arithmetic
Journal of VLSI Signal Processing Systems for Signal, Image, and Video Technology, Vol. 28, Núm. 1-2, pp. 115-128
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Implementation of the One Dimensional Discrete Cosine Transform using the Residue Number System
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
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Improving strained-Si on Si 1-xGe x deep submicron MOSFETs performance by means of a stepped doping profile
IEEE Transactions on Electron Devices, Vol. 48, Núm. 9, pp. 1878-1884
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Index-based RNS DWT architectures for custom IC designs
IEEE Workshop on Signal Processing Systems, SiPS: Design and Implementation
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Instrumentos, métodos y equipos de medida
Granada (Campus de Fuentenueva, s/n, 18071 Granada) : P. García Fernández, 2001
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Introducción a la informática
McGraw-Hill Interamericana de España
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Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
Journal of Applied Physics, Vol. 89, Núm. 10, pp. 5478-5487
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Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
Journal of Applied Physics, Vol. 90, Núm. 7, pp. 3396-3404
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Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770
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Solid-State Electronics: Foreword
Solid-State Electronics, Vol. 45, Núm. 4, pp. 539
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Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449