Departamento
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Publicaciones (47) Publicaciones en las que ha participado algún/a investigador/a
2007
-
A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
IEEE Transactions on Electron Devices, Vol. 54, Núm. 12, pp. 3369-3377
-
A comprehensive study of the corner effects in Pi-gate SOI MOSFETs
ECS Transactions
-
A model for the generation recombination noise in junction field effect structures application to four-gate transistors
NOISE AND FLUCTUATIONS
-
A model for the generation recombination noise in junction field effect structures: Application to four-gate transistors
AIP Conference Proceedings
-
A multijunction solar cell simulation program for the development of concentration systems
2007 Spanish Conference on Electron Devices, Proceedings
-
A study on band nonparabolicity effects in nanostructures
2007 Spanish Conference on Electron Devices, Proceedings
-
A theoretical interpretation of magnetoresistance mobility in silicon inversion layers
Journal of Applied Physics, Vol. 102, Núm. 1
-
An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms
Semiconductor Science and Technology, Vol. 22, Núm. 4, pp. 348-353
-
Analysis of the influence of band non-parabolicity on the subband structure of a Si quantum wire
Journal of Computational Electronics, Vol. 6, Núm. 1-3, pp. 149-152
-
Anisotropy of electron mobility in arbitrarily oriented FinFETs
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
-
Ballisticity at very low drain bias in DG SOI nano-MOSFETs
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2
-
Ballisticity at very low drain bias in DG SOI nano-MOSFETs
2007 International Semiconductor Device Research Symposium, ISDRS
-
CMS physics technical design report: Addendum on high density QCD with heavy ions
Journal of Physics G: Nuclear and Particle Physics, Vol. 34, Núm. 11, pp. 2307-2455
-
Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs
Solid-State Electronics, Vol. 51, Núm. 9, pp. 1211-1215
-
Caracterización eléctrica de transistores basados en nitruros
Vector plus: miscelánea científico - cultural, Núm. 29, pp. 31-39
-
Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy
2007 Spanish Conference on Electron Devices, Proceedings
-
Charge transport in nanoscaled silicon-on-insulator devices
Proceedings of SPIE - The International Society for Optical Engineering
-
Digital signature embedding technique for IP core protection
Proceedings - 2007 3rd Southern Conference on Programmable Logic, SPL'07
-
Electron transport in silicon-on-insulator nanodevices
NATO Security through Science Series C: Environmental Security
-
Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics, Vol. 102, Núm. 8