Publicaciones (47) Publicaciones en las que ha participado algún/a investigador/a

2007

  1. A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects

    IEEE Transactions on Electron Devices, Vol. 54, Núm. 12, pp. 3369-3377

  2. A comprehensive study of the corner effects in Pi-gate SOI MOSFETs

    ECS Transactions

  3. A model for the generation recombination noise in junction field effect structures application to four-gate transistors

    NOISE AND FLUCTUATIONS

  4. A model for the generation recombination noise in junction field effect structures: Application to four-gate transistors

    AIP Conference Proceedings

  5. A multijunction solar cell simulation program for the development of concentration systems

    2007 Spanish Conference on Electron Devices, Proceedings

  6. A study on band nonparabolicity effects in nanostructures

    2007 Spanish Conference on Electron Devices, Proceedings

  7. A theoretical interpretation of magnetoresistance mobility in silicon inversion layers

    Journal of Applied Physics, Vol. 102, Núm. 1

  8. An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms

    Semiconductor Science and Technology, Vol. 22, Núm. 4, pp. 348-353

  9. Analysis of the influence of band non-parabolicity on the subband structure of a Si quantum wire

    Journal of Computational Electronics, Vol. 6, Núm. 1-3, pp. 149-152

  10. Anisotropy of electron mobility in arbitrarily oriented FinFETs

    ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

  11. Ballisticity at very low drain bias in DG SOI nano-MOSFETs

    2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2

  12. Ballisticity at very low drain bias in DG SOI nano-MOSFETs

    2007 International Semiconductor Device Research Symposium, ISDRS

  13. CMS physics technical design report: Addendum on high density QCD with heavy ions

    Journal of Physics G: Nuclear and Particle Physics, Vol. 34, Núm. 11, pp. 2307-2455

  14. Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs

    Solid-State Electronics, Vol. 51, Núm. 9, pp. 1211-1215

  15. Caracterización eléctrica de transistores basados en nitruros

    Vector plus: miscelánea científico - cultural, Núm. 29, pp. 31-39

  16. Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy

    2007 Spanish Conference on Electron Devices, Proceedings

  17. Charge transport in nanoscaled silicon-on-insulator devices

    Proceedings of SPIE - The International Society for Optical Engineering

  18. Digital signature embedding technique for IP core protection

    Proceedings - 2007 3rd Southern Conference on Programmable Logic, SPL'07

  19. Electron transport in silicon-on-insulator nanodevices

    NATO Security through Science Series C: Environmental Security

  20. Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors

    Journal of Applied Physics, Vol. 102, Núm. 8