Publicaciones en las que colabora con ANDRÉS GODOY MEDINA (22)

2019

  1. Resistive switching and charge transport in laser-fabricated graphene oxide memristors: A time series and quantum point contact modeling approach

    Materials, Vol. 12, Núm. 22

2011

  1. An inversion-charge analytical model for square gate-all-around MOSFETs

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 9, pp. 2854-2861

  2. Ultrathin n-Channel and p-Channel SOI MOSFETs

    Engineering Materials (Springer Science and Business Media B.V.), pp. 169-185

2010

  1. An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933

  2. An analytical model for square GAA MOSFETs including quantum effects

    Solid-State Electronics, Vol. 54, Núm. 11, pp. 1463-1469

2009

  1. A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Monte Carlo simulation of nanoelectronic devices

    Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191

2008

  1. Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 1, pp. 411-416

2007

  1. Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices

    Journal of Computational Electronics, Vol. 6, Núm. 1-3, pp. 41-44

2006

  1. Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility

    Journal of Applied Physics, Vol. 100, Núm. 1

2005

  1. Double gate silicon-on-insulator transistors: N+-n+ gate versus n+-p+ gate configuration

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Electron transport in silicon inversion slabs of nanometric thickness

    Proceedings of SPIE - The International Society for Optical Engineering

  3. Influence of confined acoustic phonons on the electron mobility in ultrathin silicon-on-insulator layers

    Proceedings - Electrochemical Society

  4. Monte Carlo simulation of velocity modulation transistors

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Double gate silicon on insulator transistors. A Monte Carlo study

    Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945

  2. Double gate silicon-on-insulator transistors: N+-n+ gate versus n+-p+ gate configuration

    ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

2003

  1. A new remote Coulomb scattering model for ultrathin oxide MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

    Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937

  3. Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

    Journal of Applied Physics, Vol. 94, Núm. 9, pp. 5732-5741

  4. Remote surface roughness scattering in ultrathin-oxide MOSFETs

    European Solid-State Device Research Conference