GRUPO DE INVESTIGACION EN DISPOSITIVOS ELECTRONICOS
GRIDE
École Polytechnique Fédérale de Lausanne
Lausana, SuizaPublicacións en colaboración con investigadores/as de École Polytechnique Fédérale de Lausanne (20)
2019
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Ionic dipolar switching hinders charge collection in perovskite solar cells with normal and inverted hysteresis
Solar Energy Materials and Solar Cells, Vol. 195, pp. 291-298
2018
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Analysis of the heterogate electron-hole bilayer tunneling field-effect transistor with partially doped channels: Effects on tunneling distance modulation and occupancy probabilities
IEEE Transactions on Electron Devices, Vol. 65, Núm. 1, pp. 339-346
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Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
Applied Physics Letters, Vol. 112, Núm. 18
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Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
IEEE Transactions on Electron Devices, Vol. 65, Núm. 10, pp. 4679-4686
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Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
2017
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Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs
IEEE Transactions on Electron Devices, Vol. 64, Núm. 8, pp. 3084-3091
2016
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Assessment of confinement-induced band-To-band tunneling leakage in the FinEHBTFET
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
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Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor
Journal of Applied Physics, Vol. 119, Núm. 4
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Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor
IEEE Transactions on Electron Devices, Vol. 63, Núm. 8, pp. 3320-3326
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Switching Behavior Constraint in the Heterogate Electron-Hole Bilayer Tunnel FET: The Combined Interplay between Quantum Confinement Effects and Asymmetric Configurations
IEEE Transactions on Electron Devices, Vol. 63, Núm. 6, pp. 2570-2576
2015
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Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor
Applied Physics Letters, Vol. 106, Núm. 26
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Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'
Semiconductor Science and Technology, Vol. 30, Núm. 12
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Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement
IEEE Transactions on Electron Devices, Vol. 62, Núm. 11, pp. 3560-3566
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Response to "comment on 'Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor'" [Appl. Phys. Lett. 106, 026102 (2015)]
Applied Physics Letters
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Role of the gate in ballistic nanowire SOI MOSFETs
Solid-State Electronics, Vol. 112, pp. 24-28
2014
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Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
Applied Physics Letters, Vol. 105, Núm. 8
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Design and development of sensing RFID tags on flexible foil compatible with EPC gen 2
IEEE Sensors Journal, Vol. 14, Núm. 12, pp. 4361-4371
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Modeling the channel charge and potential in quasi-ballistic nanoscale double-gate MOSFETs
IEEE Transactions on Electron Devices, Vol. 61, Núm. 8, pp. 2640-2646
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Properties and printability of inkjet and screen-printed silver patterns for RFID antennas
Journal of Electronic Materials, Vol. 43, Núm. 2, pp. 604-617
2012
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Physical and electrical properties of ink-jet and screen printed patterns for RFID HF antennas
2012 IEEE International Conference on RFID-Technologies and Applications, RFID-TA 2012