Publicacions en què col·labora amb PEDRO CARTUJO ESTÉBANEZ (27)

2005

  1. Monte Carlo simulation of velocity modulation transistors

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Double gate silicon on insulator transistors. A Monte Carlo study

    Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945

  2. Image and exchange-correlation effects in double gate silicon-on-insulator transistors

    Microelectronic Engineering

2003

  1. Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

    Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937

  2. Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers

    Applied Physics Letters, Vol. 83, Núm. 15, pp. 3120-3122

  3. Monte Carlo simulation of remote-coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors

    Applied Physics Letters, Vol. 82, Núm. 19, pp. 3251-3253

2002

  1. Direct and trap-assisted elastic tunneling through ultrathin gate oxides

    Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5116-5124

2001

  1. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

  2. Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770

  3. Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

    IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449

2000

  1. Influence of technological parameters on the behavior of the hole effective mass in SiGe structures

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 1978-1982

1999

  1. Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

    Computer Physics Communications, Vol. 121, pp. 547-549

1998

  1. A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251

  2. Electron mobility in quantized β-SiC inversion layers

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1631-1633

  3. Monte carlo simulation of electron transport properties in extremely thin SOI MOSFET's

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 5, pp. 1122-1126

  4. Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1538-1540

1997

  1. Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  2. Electron transport properties of quantized silicon carbide inversion layers

    Journal of Electronic Materials, Vol. 26, Núm. 3, pp. 203-207

  3. Study of the effects of a stepped doping profile in short-channel mosfet's

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1425-1431

  4. The dependence of the electron mobility on the longitudinal electric field in MOSFETs

    Semiconductor Science and Technology, Vol. 12, Núm. 3, pp. 321-330