Publicaciones en colaboración con investigadores/as de École Polytechnique Fédérale de Lausanne (16)

2018

  1. Analysis of the heterogate electron-hole bilayer tunneling field-effect transistor with partially doped channels: Effects on tunneling distance modulation and occupancy probabilities

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 1, pp. 339-346

  2. Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor

    Applied Physics Letters, Vol. 112, Núm. 18

  3. Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 10, pp. 4679-4686

  4. Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

2017

  1. Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 8, pp. 3084-3091

2016

  1. Assessment of confinement-induced band-To-band tunneling leakage in the FinEHBTFET

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  2. Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

    Journal of Applied Physics, Vol. 119, Núm. 4

  3. Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 8, pp. 3320-3326

  4. Switching Behavior Constraint in the Heterogate Electron-Hole Bilayer Tunnel FET: The Combined Interplay between Quantum Confinement Effects and Asymmetric Configurations

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 6, pp. 2570-2576

2015

  1. Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

    Applied Physics Letters, Vol. 106, Núm. 26

  2. Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'

    Semiconductor Science and Technology, Vol. 30, Núm. 12

  3. Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 11, pp. 3560-3566

  4. Response to "comment on 'Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor'" [Appl. Phys. Lett. 106, 026102 (2015)]

    Applied Physics Letters

  5. Role of the gate in ballistic nanowire SOI MOSFETs

    Solid-State Electronics, Vol. 112, pp. 24-28

2014

  1. Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

    Applied Physics Letters, Vol. 105, Núm. 8

  2. Modeling the channel charge and potential in quasi-ballistic nanoscale double-gate MOSFETs

    IEEE Transactions on Electron Devices, Vol. 61, Núm. 8, pp. 2640-2646