Publicaciones en las que colabora con FRANCISCO JESÚS GÁMIZ PÉREZ (53)

2019

  1. A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

    Solid-State Electronics, Vol. 159, pp. 19-25

2018

  1. 3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  2. Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs

    Solid-State Electronics, Vol. 143, pp. 49-55

  3. Scaling FDSOI technology down to 7 nm - A physical modeling study based on 3D phase-space subband boltzmann transport

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

2017

  1. Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 49

  2. Multi-subband ensemble Monte Carlo simulations of scaled GAA MOSFETs

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  3. Three-dimensional multi-subband simulation of scaled FinFETs

    European Solid-State Device Research Conference

2016

  1. On the influence of the back-gate bias on InGaAs Trigate MOSFETs

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

2015

  1. Analytic Potential and Charge Model of Semiconductor Quantum Wells

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 12, pp. 4186-4191

  2. Analytic drain current model for III-V cylindrical nanowire transistors

    Journal of Applied Physics, Vol. 118, Núm. 4

  3. Impact of the back-gate biasing on trigate MOSFET electron mobility

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 1, pp. 224-227

  4. Mobility and capacitance comparison in scaled InGaAs versus Si trigate MOSFETs

    IEEE Electron Device Letters, Vol. 36, Núm. 2, pp. 114-116

  5. Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  6. Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors

    Solid-State Electronics, Vol. 114, pp. 30-34

  7. The unexpected beneficial effect of the L -valley population on the electron mobility of GaAs nanowires

    Applied Physics Letters, Vol. 106, Núm. 2

2014

  1. 3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects

    Solid-State Electronics, Vol. 92, pp. 28-34

  3. Influence of alloy disorder scattering on the hole mobility of SiGe nanowires

    Journal of Applied Physics, Vol. 116, Núm. 24

  4. Size-dependent electron mobility in InAs nanowires

    European Solid-State Device Research Conference

  5. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    Journal of Applied Physics, Vol. 116, Núm. 17