PEDRO
CARTUJO ESTÉBANEZ
Researcher in the period 2008-2009
FRANCISCO JESÚS
GÁMIZ PÉREZ
CATEDRÁTICO DE UNIVERSIDAD
Publications by the researcher in collaboration with FRANCISCO JESÚS GÁMIZ PÉREZ (27)
2005
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Monte Carlo simulation of velocity modulation transistors
2005 Spanish Conference on Electron Devices, Proceedings
2004
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Double gate silicon on insulator transistors. A Monte Carlo study
Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945
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Image and exchange-correlation effects in double gate silicon-on-insulator transistors
Microelectronic Engineering
2003
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Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs
Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937
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Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers
Applied Physics Letters, Vol. 83, Núm. 15, pp. 3120-3122
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Monte Carlo simulation of remote-coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors
Applied Physics Letters, Vol. 82, Núm. 19, pp. 3251-3253
2002
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Direct and trap-assisted elastic tunneling through ultrathin gate oxides
Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5116-5124
2001
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Electron transport in silicon-on-insulator devices
Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620
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Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770
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Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449
2000
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Influence of technological parameters on the behavior of the hole effective mass in SiGe structures
Journal of Applied Physics, Vol. 88, Núm. 4, pp. 1978-1982
1999
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Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry
Computer Physics Communications, Vol. 121, pp. 547-549
1998
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A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot
IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251
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Electron mobility in quantized β-SiC inversion layers
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1631-1633
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Monte carlo simulation of electron transport properties in extremely thin SOI MOSFET's
IEEE Transactions on Electron Devices, Vol. 45, Núm. 5, pp. 1122-1126
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Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1538-1540
1997
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Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs
Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations
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Electron transport properties of quantized silicon carbide inversion layers
Journal of Electronic Materials, Vol. 26, Núm. 3, pp. 203-207
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Study of the effects of a stepped doping profile in short-channel mosfet's
IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1425-1431
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The dependence of the electron mobility on the longitudinal electric field in MOSFETs
Semiconductor Science and Technology, Vol. 12, Núm. 3, pp. 321-330