Publicaciones en las que colabora con ANDRÉS GODOY MEDINA (29)

2012

  1. DC and low-frequency noise optimization of four-gate transistors

    2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

  2. Effects of gate oxide and junction nonuniformity on the DC and low-frequency noise performance of four-gate transistors

    IEEE Transactions on Electron Devices, Vol. 59, Núm. 2, pp. 459-467

2011

  1. Learning in a virtual laboratory: Educational applications of three-dimensional animations

    International Journal of Innovation and Learning, Vol. 9, Núm. 3, pp. 325-337

  2. Study of 1/f and generation-recombination noise in four gate transistors

    Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

2010

  1. Localization and quantification of noise sources in four-gate field-effect-transistors

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

2009

  1. Effect of traps in the performance of four gate transistors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Influence of dopant profiles and traps on the low frequency noise of four gate transistors

    AIP Conference Proceedings

2008

  1. A low-frequency noise model for four-gate field-effect transistors

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 3, pp. 896-903

2007

  1. A model for the generation recombination noise in junction field effect structures: Application to four-gate transistors

    AIP Conference Proceedings

2005

  1. Characterization of oxygen related defects in silicon p-n junctions

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Effects of oxygen-related traps in silicon on the generation-recombination noise

    AIP Conference Proceedings

2004

  1. Effects of oxygen related defects on the electrical and thermal behavior of a n+ - p junction

    Journal of Applied Physics, Vol. 95, Núm. 2, pp. 561-570

2002

  1. Generation-recombination noise in highly asymmetrical p-n junctions

    Journal of Applied Physics, Vol. 92, Núm. 1, pp. 320-329

  2. Temperature dependence of generation-recombination noise in p-n junctions

    Journal De Physique. IV : JP

2001

  1. A simple subthreshold swing model for short channel MOSFETs

    Solid-State Electronics, Vol. 45, Núm. 3, pp. 391-397

  2. Contribution of injection in current noise due to generation and recombination of carriers in p-n junctions

    Journal of Applied Physics, Vol. 90, Núm. 8, pp. 3998-4006

2000

  1. Optimum design in a JFET for minimum generation-recombination noise

    Microelectronics Reliability, Vol. 40, Núm. 11, pp. 1965-1968

1997

  1. Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  2. Estudio del ruido de baja frecuencia en transistores de efecto campo

    Universidad de Granada

  3. Gate voltage and temperature dependencies of up and down times of RTS in MOS structures: A theoretical study

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations