ESTADÍSTICA E INVESTIGACIÓN OPERATIVA
DEPARTMENT
JUAN BAUTISTA
ROLDÁN ARANDA
CATEDRÁTICO DE UNIVERSIDAD
Publications by the researcher in collaboration with JUAN BAUTISTA ROLDÁN ARANDA (21)
2024
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Different PCA approaches for vector functional time series with applications to resistive switching processes
Mathematics and Computers in Simulation, Vol. 223, pp. 288-298
2023
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An approach to non-homogenous phase-type distributions through multiple cut-points
Quality Engineering, Vol. 35, Núm. 4, pp. 619-638
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Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient
ACS Applied Materials and Interfaces, Vol. 15, Núm. 15, pp. 19102-19110
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Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices
IEEE Transactions on Electron Devices, Vol. 70, Núm. 4, pp. 1533-1539
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Variability in Resistive Memories
Advanced Intelligent Systems, Vol. 5, Núm. 6
2021
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A complex model via phase-type distributions to study random telegraph noise in resistive memories
Mathematics, Vol. 9, Núm. 4, pp. 1-16
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Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies
Solid-State Electronics, Vol. 176
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Homogeneity problem for basis expansion of functional data with applications to resistive memories
Mathematics and Computers in Simulation, Vol. 186, pp. 41-51
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Linear-Phase-Type probability modelling of functional PCA with applications to resistive memories
Mathematics and Computers in Simulation, Vol. 186, pp. 71-79
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Memristor variability and stochastic physical properties modeling from a multivariate time series approach
Chaos, Solitons and Fractals, Vol. 143
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One cut‐point phase‐type distributions in reliability. An application to resistive random access memories
Mathematics, Vol. 9, Núm. 21
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Stochastic resonance in a metal-oxide memristive device
Chaos, Solitons and Fractals, Vol. 144
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Time series modeling of the cycle-to-cycle variability in h-BN based memristors
IEEE International Reliability Physics Symposium Proceedings
2020
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Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages
IEEE International Reliability Physics Symposium Proceedings
2019
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Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs
Microelectronic Engineering, Vol. 214, pp. 104-109
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Phase-type distributions for studying variability in resistive memories
Journal of Computational and Applied Mathematics, Vol. 345, pp. 23-32
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Resistive switching and charge transport in laser-fabricated graphene oxide memristors: A time series and quantum point contact modeling approach
Materials, Vol. 12, Núm. 22
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Stochastic modeling of Random Access Memories reset transitions
Mathematics and Computers in Simulation, Vol. 159, pp. 197-209
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Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories
Journal of Applied Physics, Vol. 125, Núm. 17
2018
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Modelling Resistive Random Access Memories by Means of Functional Principal Component Analysis
Advances in Mass Data Analysis of Images and Signals with Applications in Medicine, r/g/b Biotechnology, Food Industries and Dietetics, Biometry and Security, Agriculture, Drug Discover, and System Biology - 12th International Conference, MDA 2017, Proceedings