Publications dans lesquelles il/elle collabore avec JUAN BAUTISTA ROLDÁN ARANDA (22)

2024

  1. Different PCA approaches for vector functional time series with applications to resistive switching processes

    Mathematics and Computers in Simulation, Vol. 223, pp. 288-298

  2. Variability in HfO2-based memristors described with a new bidimensional statistical technique

    Nanoscale

2023

  1. An approach to non-homogenous phase-type distributions through multiple cut-points

    Quality Engineering, Vol. 35, Núm. 4, pp. 619-638

  2. Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient

    ACS Applied Materials and Interfaces, Vol. 15, Núm. 15, pp. 19102-19110

  3. Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 4, pp. 1533-1539

  4. Variability in Resistive Memories

    Advanced Intelligent Systems, Vol. 5, Núm. 6

2021

  1. A complex model via phase-type distributions to study random telegraph noise in resistive memories

    Mathematics, Vol. 9, Núm. 4, pp. 1-16

  2. Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies

    Solid-State Electronics, Vol. 176

  3. Homogeneity problem for basis expansion of functional data with applications to resistive memories

    Mathematics and Computers in Simulation, Vol. 186, pp. 41-51

  4. Linear-Phase-Type probability modelling of functional PCA with applications to resistive memories

    Mathematics and Computers in Simulation, Vol. 186, pp. 71-79

  5. Memristor variability and stochastic physical properties modeling from a multivariate time series approach

    Chaos, Solitons and Fractals, Vol. 143

  6. One cut‐point phase‐type distributions in reliability. An application to resistive random access memories

    Mathematics, Vol. 9, Núm. 21

  7. Stochastic resonance in a metal-oxide memristive device

    Chaos, Solitons and Fractals, Vol. 144

  8. Time series modeling of the cycle-to-cycle variability in h-BN based memristors

    IEEE International Reliability Physics Symposium Proceedings

2020

  1. Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages

    IEEE International Reliability Physics Symposium Proceedings

2019

  1. Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

    Microelectronic Engineering, Vol. 214, pp. 104-109

  2. Phase-type distributions for studying variability in resistive memories

    Journal of Computational and Applied Mathematics, Vol. 345, pp. 23-32

  3. Resistive switching and charge transport in laser-fabricated graphene oxide memristors: A time series and quantum point contact modeling approach

    Materials, Vol. 12, Núm. 22

  4. Stochastic modeling of Random Access Memories reset transitions

    Mathematics and Computers in Simulation, Vol. 159, pp. 197-209

  5. Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories

    Journal of Applied Physics, Vol. 125, Núm. 17