Publicaciones en colaboración con investigadores/as de École Polytechnique Fédérale de Lausanne (20)

2019

  1. Ionic dipolar switching hinders charge collection in perovskite solar cells with normal and inverted hysteresis

    Solar Energy Materials and Solar Cells, Vol. 195, pp. 291-298

2018

  1. Analysis of the heterogate electron-hole bilayer tunneling field-effect transistor with partially doped channels: Effects on tunneling distance modulation and occupancy probabilities

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 1, pp. 339-346

  2. Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor

    Applied Physics Letters, Vol. 112, Núm. 18

  3. Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 10, pp. 4679-4686

  4. Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

2017

  1. Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 8, pp. 3084-3091

2016

  1. Assessment of confinement-induced band-To-band tunneling leakage in the FinEHBTFET

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  2. Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

    Journal of Applied Physics, Vol. 119, Núm. 4

  3. Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 8, pp. 3320-3326

  4. Switching Behavior Constraint in the Heterogate Electron-Hole Bilayer Tunnel FET: The Combined Interplay between Quantum Confinement Effects and Asymmetric Configurations

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 6, pp. 2570-2576

2015

  1. Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

    Applied Physics Letters, Vol. 106, Núm. 26

  2. Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'

    Semiconductor Science and Technology, Vol. 30, Núm. 12

  3. Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 11, pp. 3560-3566

  4. Response to "comment on 'Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor'" [Appl. Phys. Lett. 106, 026102 (2015)]

    Applied Physics Letters

  5. Role of the gate in ballistic nanowire SOI MOSFETs

    Solid-State Electronics, Vol. 112, pp. 24-28

2014

  1. Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

    Applied Physics Letters, Vol. 105, Núm. 8

  2. Design and development of sensing RFID tags on flexible foil compatible with EPC gen 2

    IEEE Sensors Journal, Vol. 14, Núm. 12, pp. 4361-4371

  3. Modeling the channel charge and potential in quasi-ballistic nanoscale double-gate MOSFETs

    IEEE Transactions on Electron Devices, Vol. 61, Núm. 8, pp. 2640-2646

  4. Properties and printability of inkjet and screen-printed silver patterns for RFID antennas

    Journal of Electronic Materials, Vol. 43, Núm. 2, pp. 604-617

2012

  1. Physical and electrical properties of ink-jet and screen printed patterns for RFID HF antennas

    2012 IEEE International Conference on RFID-Technologies and Applications, RFID-TA 2012