Publicaciones en las que colabora con JUAN ANTONIO LÓPEZ VILLANUEVA (19)

2016

  1. Tunable MEMS piezoelectric energy harvesting device

    Microsystem Technologies, Vol. 22, Núm. 4, pp. 823-830

2014

  1. A novel electrode structure compared with interdigitated electrodes as capacitive sensor

    Sensors and Actuators, B: Chemical, Vol. 204, pp. 552-560

2001

  1. Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

    Journal of Applied Physics, Vol. 90, Núm. 7, pp. 3396-3404

2000

  1. Effects of the inversion-layer centroid on the performance of double-gate MOSFET's

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141-146

1999

  1. Experimental determination of the effective mobility in NMOSFETs: a comparative study

    Solid-State Electronics, Vol. 43, Núm. 4, pp. 701-707

1997

  1. Effects of the inversion layer centroid on MOSFET behavior

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 11, pp. 1915-1922

  2. Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628

1996

  1. A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region

    Solid-State Electronics, Vol. 39, Núm. 6, pp. 875-883

  2. Semi-empirical model of electron mobility in MOSFETS in strong inversion regime

    IEE Proceedings: Circuits, Devices and Systems, Vol. 143, Núm. 4, pp. 202-206

1995

  1. A model for the quantized accumulation layer in metal-insulator-semiconductor structures

    Solid State Electronics, Vol. 38, Núm. 1, pp. 203-210

  2. Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

    Solid State Electronics, Vol. 38, Núm. 3, pp. 611-614

  3. Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K

    Microelectronic Engineering, Vol. 28, Núm. 1-4, pp. 317-320

  4. Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 5, pp. 999-1004

  5. Oxide charge space correlation in inversion layers. II. Three-dimensional oxide charge distribution

    Semiconductor Science and Technology, Vol. 10, Núm. 5, pp. 592-600

  6. Universality of electron mobility curves in MOSFETs: a Monte Carlo study

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265

1994

  1. Análisis y modelización de la movilidad en transistores Mos

    Granada : Departamento de Electrónica y Tecnología de Computadores, D.L. 1994

  2. Estudio y caracterización de la movilidad de electrones en transistores MOS por el método de Monte Carlo

    Universidad de Granada

1993

  1. An analytical expression for phonon-limited electron mobility in silicon-inversion layers

    Journal of Applied Physics, Vol. 74, Núm. 5, pp. 3289-3292

  2. Influence of the interface-state density on the electron mobility in silicon inversion layers

    Journal of Electronic Materials, Vol. 22, Núm. 9, pp. 1159-1163